Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Berk Morkoc"'
Publikováno v:
Uludağ University Journal of The Faculty of Engineering, Vol 24, Iss 3, Pp 309-318 (2019)
The radiation response of RadFET irradiated with 18 MV X-rays emitted from a linear accelerator was examined on threshold voltage shifts and trap densities. The measured threshold voltages were compared before and after irradiation. Trap densities ca
Externí odkaz:
https://doaj.org/article/7cd045c0314a4d42bcd2d77ff327deac
Publikováno v:
Journal of Bionic Memory. 1:6-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be2ce4cf807b5b869012404f981caa5c
https://doi.org/10.53545/jbm.2021175569
https://doi.org/10.53545/jbm.2021175569
Publikováno v:
Materials Chemistry and Physics. 292:126875
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa15344b284d46a1f290f622ec66cd7
https://doi.org/10.1016/j.matchemphys.2022.126875
https://doi.org/10.1016/j.matchemphys.2022.126875
Publikováno v:
Uludağ University Journal of The Faculty of Engineering. :309-318
Lineer hizlandiricidan yayilan 18 MV’luk X-isinlari ile isinlanan RadFET’lerin radyasyon cevaplari, esik voltaj kaymalari ve tuzak yogunluklari uzerinden incelenmistir. Isinlamadan once ve sonra esik voltajlari olculerek karsilastirilmistir. Cesi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::681c9212f54d29d3771cebf12c38b282
https://doi.org/10.17482/uumfd.558166
https://doi.org/10.17482/uumfd.558166
In the present work, we examine the effect of structural modifications occurring during the fabrication of Al/Yb2O3/SiO2/n-Si/Al MOS capacitors under different annealing temperatures on the electrical characteristics of the capacitors. The structural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::080d19d0779f08ecabe34b767e0af5a9
https://aperta.ulakbim.gov.tr/record/236198
https://aperta.ulakbim.gov.tr/record/236198
Publikováno v:
Materials Science in Semiconductor Processing. 130:105819
This study presents comprehensive results on the structural modifications of Er2O3/n-Si hetero-structures under post-deposition annealing (PDA) and the effects of these changes on the electrical characteristics of the Al/Er2O3/n-Si/Al MOS capacitors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0e22fb98e0783c7c14f89e845da4405
https://doi.org/10.1016/j.mssp.2021.105819
https://doi.org/10.1016/j.mssp.2021.105819
Publikováno v:
RAP 2019 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52580ca58ac61d7b8c1f09b4e9c12ccb
https://doi.org/10.37392/rapproc.2019.31
https://doi.org/10.37392/rapproc.2019.31
Publikováno v:
Volume: 15, Issue: 2 139-143
Celal Bayar University Journal of Science
Celal Bayar University Journal of Science
Electrical parameters of Erbium Oxide (Er2O3) MOS capacitors depending on frequency were investigated deeply, in this paper. Er2O3 layers were deposited on p–Si substrates with (100) oriented using RF–magnetron sputtering method. The films were a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02b46dc5ef0f4bd0b6564d5c9f372d5e
https://hdl.handle.net/20.500.12491/1206
https://hdl.handle.net/20.500.12491/1206