Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Berc, Kalanyan"'
Publikováno v:
Environmental Science & Technology. 56:5448-5455
This study demonstrates that commonly used consumer products such as single-use food grade nylon bags and hot beverage cups lined with low-density polyethylene release nanometer-sized plastic particles at number densities10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed1e544e332c24e75fbcb2e2b1d176a8
https://doi.org/10.1021/acs.est.1c06768
https://doi.org/10.1021/acs.est.1c06768
Atomic Layer Deposition of Al2O3 Using Trimethylaluminum and H2O: The Kinetics of the H2O Half-Cycle
Publikováno v:
The Journal of Physical Chemistry C. 124:3410-3420
Atomic layer deposition (ALD) of Al2O3 using trimethylaluminum and H2O is known to proceed through sequential surface reactions that leave the surface alternately terminated with AlCH3 and OH groups. Using in situ reflection–absorption infrared spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::739636fa9a7df249cbb6682d4b3beb9e
https://doi.org/10.1021/acs.jpcc.9b11291
https://doi.org/10.1021/acs.jpcc.9b11291
Autor:
Berc, Kalanyan, Ryan, Beams, Michael B, Katz, Albert V, Davydov, James E, Maslar, Ravindra K, Kanjolia
Publikováno v:
J Vac Sci Technol A
Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS(2) rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::889bb59394b778bc469f8d6589fe680e
https://pubmed.ncbi.nlm.nih.gov/33281278
https://pubmed.ncbi.nlm.nih.gov/33281278
Autor:
Berc Kalanyan, Brent A. Sperling
Publikováno v:
Applied Spectroscopy. 72:1396-1403
Silicon wafer-based internal reflection elements (IREs) present many practical advantages over the prisms conventionally used for attenuated total reflection (ATR) spectroscopy in the infrared. We examine two methods of using minimally prepared IREs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e3a8e860dfe1aec8bfa5a9b227336a8
https://doi.org/10.1177/0003702818779799
https://doi.org/10.1177/0003702818779799
Autor:
James E. Maslar, William A. Kimes, Albert V. Davydov, Ryan Beams, Elias Garratt, Berc Kalanyan, Ravindra K. Kanjolia, Stephan J. Stranick, Irina Kalish
Publikováno v:
Chemistry of Materials. 29:6279-6288
High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a783bc9515c2a82a93b97437611fbe5
https://doi.org/10.1021/acs.chemmater.7b01367
https://doi.org/10.1021/acs.chemmater.7b01367
Autor:
Patrick M. Vora, Stephan J. Stranick, Albert V. Davydov, Berc Kalanyan, Alina Bruma, Francesca Tavazza, Sergiy Krylyuk, Kamal Choudhary, Luiz Gustavo Cançado, Irina Kalish, Ryan Beams, Arunima K. Singh
Publikováno v:
ACS Nano. 10:9626-9636
We study the crystal symmetry of few-layer 1T′ MoTe2 using the polarization dependence of the second harmonic generation (SHG) and Raman scattering. Bulk 1T′ MoTe2 is known to be inversion symmetric; however, we find that the inversion symmetry i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab239085a5ee796369adfdc044d72877
https://doi.org/10.1021/acsnano.6b05127
https://doi.org/10.1021/acsnano.6b05127
Autor:
Robert A. Burke, Albert V. Davydov, Frank J. Crowne, Sarah M. Eichfeld, Terrance O'Regan, Kehao Zhang, Dmitry Ruzmetov, Tony Ivanov, Joshua A. Robinson, Gheorghe Stan, A. Glen Birdwell, Ganesh R. Bhimanapati, Pankaj B. Shah, Berc Kalanyan
Publikováno v:
ACS Nano. 10:3580-3588
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c383233be28363f7fe4db653c9d7a76
https://doi.org/10.1021/acsnano.5b08008
https://doi.org/10.1021/acsnano.5b08008
Autor:
Berc, Kalanyan, William A, Kimes, Ryan, Beams, Stephan J, Stranick, Elias, Garratt, Irina, Kalish, Albert V, Davydov, Ravindra K, Kanjolia, James E, Maslar
Publikováno v:
Chemistry of materials : a publication of the American Chemical Society. 29(15)
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5a1560798e884ad32dcb3e49c6eb608a
https://pubmed.ncbi.nlm.nih.gov/29545674
https://pubmed.ncbi.nlm.nih.gov/29545674
In situ chemical measurements of solution/surface reactions during metal-organic framework (MOF) thin film growth can provide valuable information about the mechanistic and kinetic aspects of key reaction steps, and allow control over crystal quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c1d0e9393410668fa2383904c9b587d
https://europepmc.org/articles/PMC5846636/
https://europepmc.org/articles/PMC5846636/
Autor:
Michael B. Katz, Berc Kalanyan, Ravindra K. Kanjolia, Albert V. Davydov, James E. Maslar, Ryan Beams
Publikováno v:
Journal of Vacuum Science & Technology A. 37:010901
Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee51c4bc9216703778c9935d3cfc9081
https://doi.org/10.1116/1.5059424
https://doi.org/10.1116/1.5059424