Zobrazeno 1 - 10
of 183
pro vyhledávání: '"Berardi Sensale-Rodriguez"'
Autor:
Arkka Bhattacharyya, Carl Peterson, Takeki Itoh, Saurav Roy, Jacqueline Cooke, Steve Rebollo, Praneeth Ranga, Berardi Sensale-Rodriguez, Sriram Krishnamoorthy
Publikováno v:
APL Materials, Vol 11, Iss 2, Pp 021110-021110-10 (2023)
We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga2O3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga2O3 buffer was grown, followed
Externí odkaz:
https://doaj.org/article/34f1e12214dc4986be5e9be608fff173
Autor:
Jacqueline Cooke, Praneeth Ranga, Jani Jesenovec, John S. McCloy, Sriram Krishnamoorthy, Michael A. Scarpulla, Berardi Sensale-Rodriguez
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract In this work, a systematic photoluminescence (PL) study on three series of gallium oxide/aluminum gallium oxide films and bulk single crystals is performed including comparing doping, epitaxial substrates, and aluminum concentration. It is o
Externí odkaz:
https://doaj.org/article/628595c80e6642d0b25df703d85053a3
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract Deep neural networks (DNNs) have substantial computational requirements, which greatly limit their performance in resource-constrained environments. Recently, there are increasing efforts on optical neural networks and optical computing base
Externí odkaz:
https://doaj.org/article/f70eb5ef627d42bea283df2da64a8c8e
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract While terahertz spectroscopy can provide valuable information regarding the charge transport properties in semiconductors, its application for the characterization of low-conductive two-dimensional layers, i.e., σs
Externí odkaz:
https://doaj.org/article/a4589a3ccd4441cdb73ecf0f82003403
Autor:
Barun Gupta, Shashank Pandey, Anjali Nahata, Berardi Sensale-Rodriguez, Sivaraman Guruswamy, Ajay Nahata
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-1 (2022)
Externí odkaz:
https://doaj.org/article/bea666d45e3e48eb876b2b72ac9ada87
Autor:
Sara Arezoomandan, Abhinav Prakash, Ashish Chanana, Jin Yue, Jieying Mao, Steve Blair, Ajay Nahata, Bharat Jalan, Berardi Sensale-Rodriguez
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Abstract We report on terahertz characterization of La-doped BaSnO3 (BSO) thin-films. BSO is a transparent complex oxide material, which has attracted substantial interest due to its large electrical conductivity and wide bandgap. The complex refract
Externí odkaz:
https://doaj.org/article/3bd3649d856e43b19cd4627c08c60529
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 23-31 (2017)
Multiple-independent-gate (MIG) silicon FinFETs were recently shown capable of enabling: 1) device-level polarity control; 2) dynamic threshold modulation; and 3) subthreshold slope tuning down to ultra-steep-slope operation. These operation mechanis
Externí odkaz:
https://doaj.org/article/06821603339c44929fa847ef5589a88a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 208-216 (2015)
Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices for low-power high-frequency analog integrated circuit applications (e.
Externí odkaz:
https://doaj.org/article/e971b942fa554089a7746aa7ecd60697
Autor:
Mehdi Hasan, Berardi Sensale-Rodriguez
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097104-097104-10 (2015)
In this paper, a two-dimensional (2-D) model for a graphene symmetric field effect transistor (SymFET), which considers (a) the intra-graphene layer potential distributions and (b) the internal current flows through the device, is presented and discu
Externí odkaz:
https://doaj.org/article/bd1744b33d344d5faf0deb543364a308
Autor:
Jimy Encomendero, Faiza Afroz Faria, S. M. Islam, Vladimir Protasenko, Sergei Rouvimov, Berardi Sensale-Rodriguez, Patrick Fay, Debdeep Jena, Huili Grace Xing
Publikováno v:
Physical Review X, Vol 7, Iss 4, p 041017 (2017)
For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier
Externí odkaz:
https://doaj.org/article/10f6ac5191db48bfbc88c77f02eab6b0