Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Beom-jun Jin"'
Publikováno v:
Microelectronics Reliability. 41:1301-1305
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca8cbc57f85867f07a39e02beb203f6
https://doi.org/10.1016/s0026-2714(01)00192-5
https://doi.org/10.1016/s0026-2714(01)00192-5
Autor:
June Moon, Sang-Bom Kang, Hong-Sick Park, Beom-jun Jin, Jung-Hyoung Lee, Yun-Seung Shin, Taek-Soo Jeon, In-Soo Jung, Sangjoo Lee, Y.S. Jeong, Yoohwan Kim, Seonghye Park, J.H. Choi, Hyung-Jong Lee, U. I. Chung, H.-J. Cho
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
The effects of TaN metal-gate thickness on the electrical characteristics of poly-Si/metal-gate/HfSiON MOSFETs have been investigated. Too thin TaN was reactive with poly-Si gate, which led to the formation of Si-doped metal gate. As a result, the wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf8128c9bc3b2a4f6a6d01792d141433
https://doi.org/10.1109/iedm.2004.1419201
https://doi.org/10.1109/iedm.2004.1419201
Autor:
Seong Geon Park, Taek Soo Jeon, Yu Gyun Shin, Hag-Ju Cho, Joo Tae Moon, Sang-Yong Kim, Beom Jun Jin, Hye Lan Lee, U-In Chung, Soo Ik Jang, Hong-bae Park, Sang Bom Kang
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
In this work, HfSiON gate dielectric is integrated for the first time in dual gate oxide of DRAM with recess channel arrary transistor (RCAT) and W/poly-Si gate for the development of sub-60nm DRAM technology. No degradation of cell transistor charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c2a52f96bfc06328ee61cdfdcd53ed
https://doi.org/10.1109/iedm.2004.1419204
https://doi.org/10.1109/iedm.2004.1419204
Autor:
Beom Jun Jin, Young-pil Kim, Sun-Ghil Lee, Joo Tae Moon, Si-Young Choi, U-In Chung, Sung-Gi Kim
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
We suggested a new qualification method for DRAM retention property by evaluation of a cell transistor leakage current using the subthreshold characteristic parameters, V/sub th//S and dV/sub th//dV/sub BS/. Correlation between the Leakage current Ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81aac62edb499e771306a71289c87ed
https://doi.org/10.1109/relphy.2004.1315369
https://doi.org/10.1109/relphy.2004.1315369
Autor:
Joo Tae Moon, Beom Jun Jin, Young-pil Kim, Gi-Sung Yeo, Si-Young Choi, Sang U. Kim, U-In Chung, Sun-Ghil Lee
Publikováno v:
Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).
A new test structure for a stacked capacitor DRAM cell transistors with a diagonal active-area was developed to analyze the leakage current characteristics of the cell transistors. The leakage current components of the low power DRAMs with different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b94bacb0ecdb0d6f9d6c06c9ec5e50b
https://doi.org/10.1109/icmts.2004.1309467
https://doi.org/10.1109/icmts.2004.1309467
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
As DRAM downscaling approaches the 0.1 /spl mu/m generation, problems related to transistor short channel effects, storage capacitance, gap filling of high aspect ratio patterns, and leakage currents through each module must be solved. Among these, p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3997fb49f69ad1723f232cc4f7cc4922
https://doi.org/10.1109/vlsit.2001.934982
https://doi.org/10.1109/vlsit.2001.934982
Autor:
Yu Gyun Shin, Taek Soo Jeon, Sang Bom Kang, U-In Chung, Hong-bae Park, Seong Geon Park, Beom Jun Jin, Hye Lan Lee, Hag-Ju Cho, Joo Tae Moon
Publikováno v:
Japanese Journal of Applied Physics. 44:2230
Post-deposition annealing was investigated for hafnium silicate films deposited on Si substrates by atomic layer deposition. Annealing in NH3 at 750°C incorporated 13 At.% nitrogen in hafnium silicate, and hysteresis significantly depended on film t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::628297b5d339b1fdeab6cbe134cb43b0
https://doi.org/10.1143/jjap.44.2230
https://doi.org/10.1143/jjap.44.2230
Publikováno v:
Proceedings of the 2004 IEEE International Reliability Physics Symposium; 2004, p445-448, 4p
Autor:
Jong-Wook Lee, Sun-Ghil Lee, Young-Pil Kimx, Young-Pil Kim, Chul-Sung Kim, Hag-Ju Cho, Seung-Beom Kim, In-Soo Jung, Deok-Hyung Lee, Dong-Chan Kim, Taek-Soo Jeon, Seong-Geon Park, Hong-Bae Park, Yong-Hoon Son, Young-Eun Lee, Beom-Jun Jin, Hye-Lan Lee, Bon-Young Koo, Sang-Bom Kang, Yu Gyun Shin
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p1047-1050, 4p
Autor:
Seong Geon Park, Beom Jun Jin, Hye Lan Lee, Hong Bae Park, Taek Soo Jeon, Hag-Ju Cho, Sang Yong Kim, Soo Ik Jang, Sang Bom Kang, Yu Gyun Shin, U-In Chung, Joo Tae Moon
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p515-518, 4p