Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Beom Kyu Ko"'
Publikováno v:
IEEE Microwave and Wireless Components Letters. 13:420-422
A low-power highly linear CMOS RF amplifier circuit composed of a Multiple-Gated common-source FET TRansistor (MGTR) in cascode configuration is reported. In an MGTR amplifier, linearity is improved by using transconductance linearization which can b
Autor:
Seong-Mo Moon, Minsu Jeong, Kang Ho Lee, Young-Ho Cho, Bonkee Kim, Bo-Eun Kim, Sangkyu Park, Jin Kim, Wanchul Kong, Jaehong Choi, Beom-Kyu Ko, Sung-Uk Kim, Jae-Young Lee, Kyoungon Yang, Tae-Ju Lee, Heeyong Yoo, Jeiyoung Lee
Publikováno v:
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
A UHF mobile single chip RFID reader is implemented in 0.18 mum CMOS process. Developed IC achieves DA output power of 3 dBm, OIP3 of 14.8 dBm, phase noise of -100 dBc/Hz at 100 kHz offset, noise figure of 35.5 dB for talk mode, 6.2 dB for listen bef
Autor:
Minsu Jeong, Bonkee Kim, Heeyong Yoo, Beom-Kyu Ko, Young-Ho Cho, Tae Wook Kim, Jongsik Kim, Hyunchol Shin, Bo-Eun Kim
Publikováno v:
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
A low power high linear transmitter for mobile WiBro and WiMAX is developed. The transmitter is fabricated in a 0.18 mum 1P6M CMOS process for low power characteristics and SoC compatibility. To achieve high linearity performance with low power consu
Autor:
Beom Kyu Ko, Kwyro Lee
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:1627-1629
In this paper, a new simultaneous impedance-matching technique of /spl Gamma//sub opt/ (optimum noise-match source reflection coefficient) and G/sub max/ (maximum available power gain-match (MAPG) source reflection coefficient) using cascode feedback
Autor:
Seyeob Kim, Sung-Uk Kim, Jung-Hwan Lee, Minsu Jeong, Seong-Ho Park, Bonkee Kim, Boeun Kim, Young-Uk Oh, Hong-Min Yoon, Yuran Kim, Beom-Kyu Ko, Tae-Ju Lee, Young-Ho Cho, Il Jung, Jin-Kyu Lim, Seong-Hyun Yoon
Publikováno v:
2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..
A direct-conversion satellite tuner-demodulator IC is realized using 0.18/spl mu/m CMOS technology. The IC down-converts a 950-2150MHz satellite broadcasting signal to base band and demodulates the signal to an MPEG data stream. The IC conforms to bo
Autor:
Young-Jin Kim, Beom-Kyu Ko, Seyeob Kim, Boeun Kim, Mu-Gu Jeong, Tae-Ju Lee, Sung-Uk Kim, Sung-Ho Park, Kyuri Kim, Jin-Kyu Lim
Publikováno v:
2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302).
This paper presents a fully integrated single-chip direct conversion receiver for DBS system. The receiver tunes 950-2150 MHz wide band using integrated low phase noise VCOs and a fractional-N phase locked loop. Fully programmable 2-58 MHz cut-off fr
Publikováno v:
AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360).
It is demonstrated that the gain of an amplifier with a large transistor cannot be controlled by bias current but can be controlled effectively by varying the effective emitter inductance. A simple method to control the gain of a driver amplifier is
Publikováno v:
AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360).
This paper presents a quantitative analysis on the cross modulation between transmitter CDMA leakage signal and single tone jammer signal, and some design guidelines for overcoming it in receiver design. The analysis shows that duplexer isolation and
Publikováno v:
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
Simplified relationship between the intermodulation distortion ratio (IM3) on two tone test and the ACPR in CDMA signal test is derived. Due to better linearity (decreased intermodulation distortion and IMD null) at high power level in class AB ampli
Publikováno v:
Proceedings of International Electron Devices Meeting.
The monolithic inductors and transmission lines on Si substrate with very high Q factor, low insertion loss, and high resonant frequency, are achieved by using very thick polyimide (10 /spl mu/m) as dielectric material, and thick Al (4 /spl mu/m) met