Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Bensong Wan"'
Autor:
Yufei Zhang, Zhihao Huo, Xiandi Wang, Xun Han, Wenqiang Wu, Bensong Wan, Hui Wang, Junyi Zhai, Juan Tao, Caofeng Pan, Zhong Lin Wang
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Designing efficient radio frequency antenna for wireless stretchable multifunction electronics remains a challenge. Here, the authors present epidermal radio frequency antenna based on silver nanofibers network for wireless power transfer and informa
Externí odkaz:
https://doaj.org/article/782e71201a2b440191fe160bbd8ecf21
Publikováno v:
AIP Advances, Vol 5, Iss 5, Pp 057102-057102-7 (2015)
The electrical performance of MoS2 can be engineered by introducing high-κ dielectrics, while the interactions between high-κ dielectrics and MoS2 need to be studied. In this study, multilayer MoS2 field-effect transistors (FETs) with a back-gated
Externí odkaz:
https://doaj.org/article/5c8ab2fd9e7a4967aa4dae531b4b7393
Autor:
Junyi Zhai, Xun Han, Zhong Lin Wang, Yufei Zhang, Xiandi Wang, Bensong Wan, Hui Wang, Wenqiang Wu, Zhihao Huo, Caofeng Pan, Juan Tao
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Nature Communications
Nature Communications
Recently, stretchable electronics combined with wireless technology have been crucial for realizing efficient human-machine interaction. Here, we demonstrate highly stretchable transparent wireless electronics composed of Ag nanofibers coils and func
Autor:
Ping, Chen, Jinbo, Pan, Wenchao, Gao, Bensong, Wan, Xianghua, Kong, Yang, Cheng, Kaihui, Liu, Shixuan, Du, Wei, Ji, Caofeng, Pan, Zhong Lin, Wang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(7)
Transition metal dichalcogenides (TMDCs) with 2H phase are expected to be building blocks in next-generation electronics; however, they suffer from electrical anisotropy, which is the basics for multi-terminal artificial synaptic devices, digital inv
Autor:
Jinlei Jiang, Xinyuan Cui, Yixin Huang, Dongmei Yan, Bensong Wang, Ziyang Yang, Mingrui Chen, Junhao Wang, Yuna Zhang, Guan Liu, Cheng Zhou, Shengsheng Cui, Jian Ni, Fuhua Yang, Daxiang Cui
Publikováno v:
Nano Biomedicine and Engineering, Vol 16, Iss 2, Pp 152-187 (2024)
In recent years, the deep integration of basic research and clinical translational research of nanotechnology and oncology has led to the emergence of a new branch, namely integrated nano-oncology. This is an emerging and important interdisciplinary
Externí odkaz:
https://doaj.org/article/75496c2dde7046c1b407292365b1f2a3
Autor:
Yufei Zhang, Yuyan Wang, Jiacheng Sun, Bensong Wan, Shaoqiang Guo, Caofeng Pan, Junying Zhang
Publikováno v:
Science Bulletin. 64:254-260
Two-dimensional (2D) nanomaterials have attracted great attention in next generation electronic and optoelectronic technologies due to the unique layered structure and excellent physical and chemical properties. However, the mechanism of transmission
Autor:
Wei Ji, Xianghua Kong, Yang Cheng, Shixuan Du, Bensong Wan, Zhong Lin Wang, Kaihui Liu, Ping Chen, Jinbo Pan, Wenchao Gao, Caofeng Pan
Publikováno v:
Advanced Materials. 34:2108615
Transition metal dichalcogenides (TMDCs) with 2H phase are expected to be the building blocks in next-generation electronics, however, suffered from electrical anisotropy, which is the basics for multi-terminal artificial synaptic devices, digital in
Autor:
Bensong Wan, Caofeng Pan, Qian Xu, Zheng Yang, Zhong Lin Wang, Junfeng Lu, Guofeng Hu, Fangtao Li, Xingqiang Liu
Publikováno v:
ACS Nano. 12:9608-9616
Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), which impedes both the reduction of the switchi
Autor:
Jiacheng, Sun, Yuyan, Wang, Shaoqiang, Guo, Bensong, Wan, Lianqing, Dong, Youdi, Gu, Cheng, Song, Caofeng, Pan, Qinghua, Zhang, Lin, Gu, Feng, Pan, Junying, Zhang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 32(9)
As unique building blocks for next-generation optoelectronics, high-quality 2D p-n junctions based on semiconducting transition metal dichalcogenides (TMDs) have attracted wide interest, which are urgent to be exploited. Herein, a novel and facile el
Autor:
Wentao Hu, Jianyong Xiang, Jinlan Wang, Bensong Wan, Fusheng Wen, Wenhong Wang, Zhongming Zeng, Shijun Yuan, Zhongyuan Liu, Weiming Lv, Yue Wang, Bo Xu, Bingchao Yang, Junying Zhang, Qian Chen, Baoshun Zhang, Yongjun Tian, Zhisheng Zhao, Qionghua Zhou
Publikováno v:
Advanced Materials. 28:9408-9415
Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-