Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Benoit Olbrechts"'
Autor:
Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It
Externí odkaz:
https://doaj.org/article/5054e077d62642bdae7f352d5f99e2ea
Publikováno v:
Journal of Microelectromechanical Systems. 24:1150-1163
This investigation presents a method of extraction of the built-in stress in films grown by thin-film deposition or growing in microplate structures. Although thin-film deposition processes are well controlled, the stress values might significantly v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c8f34b22cb87222bbf0761533b93a03
https://doi.org/10.1109/jmems.2015.2388532
https://doi.org/10.1109/jmems.2015.2388532
Publikováno v:
Advanced Materials Research. 276:145-155
In this paper, novel pressure sensors approach is proposed and described. Active devices and oscillating circuits are directly integrated on very thin dielectric membranes as pressure transducers. Involved patterning of the membrane is supposed to ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f64cd672575894ef31c00543605639
https://doi.org/10.4028/www.scientific.net/amr.276.145
https://doi.org/10.4028/www.scientific.net/amr.276.145
Autor:
Jean-Pierre Raskin, Benoit Olbrechts
Publikováno v:
Microelectronic Engineering. 87:2178-2186
The deposition rate, the etch rate in a HF-based solution and the residual internal stress of PECVD oxides are systematically analysed for various deposition conditions and post-anneal treatments. Rapid thermal anneal (RTA) at a temperature over 900^
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd0c17296289a1ad6f866737f7f68e59
https://doi.org/10.1016/j.mee.2010.01.022
https://doi.org/10.1016/j.mee.2010.01.022
Autor:
Jean-Pierre Raskin, Roger Vounckx, Johan Stiens, Isabelle Huynen, Benoit Olbrechts, Lei Zhang, Amna Elhawil, Gert Poesen, Cesar Roda Neve
Publikováno v:
Microwave and Optical Technology Letters. 52:2500-2505
A contactless and nondestructive technique is employed for characterizing single-sided metallised silicon wafers. The reflection spectra are measured using a quasi-optical millmeter-wave setup in the frequency range 40–320 GHz. The results are comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c01b030774cc4afda3c836dc8e4f1cfd
https://doi.org/10.1002/mop.25524
https://doi.org/10.1002/mop.25524
Publikováno v:
ECS Transactions. 16:165-174
This paper provides an overview of the issues associated with parasitic surface conduction (PSC) in oxidized high resistivity (HR) Si wafers, such as HR SOI, in which PSC is related to the presence of free carriers at the substrate surface. Most of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b38ab493d8f7b0d4af78a1b9972117b
https://doi.org/10.1149/1.2982866
https://doi.org/10.1149/1.2982866
Autor:
Nicolas Reckinger, Benoit Olbrechts, Sorin Melinte, Luc Piraux, Mária Mátéfi-Tempfli, Sébastien Faniel, Alexandru Vlad, V. A. Antohe, Stefan Mátéfi-Tempfli, Vincent Bayot, André Crahay
Publikováno v:
Small. 4:557-560
One of the challenging aspects of science and technology on a nanometer-scale is the precise three-dimensional control of nano-objects. Scanning probe microscopy manipulation, magneticor electric-field alignment and lithography-based techniques are o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f48539604b72b2f62ab11f75e54ce81
https://doi.org/10.1002/smll.200700724
https://doi.org/10.1002/smll.200700724
Autor:
Jean-Pierre Raskin, Ya.N. Vovk, Benoit Olbrechts, Tsung Ming Chung, Valeriya Kilchytska, Denis Flandre
Publikováno v:
Solid-State Electronics. 51:1238-1244
In this paper, "true" Silicon-On-Nothing (SON) MOSFETs fabricated by a new technique, consisting in Si layer transfer over a preetched cavity, are investigated. The process has no potential limitation with regards to the device dimensions as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95bea6fefa8a19f70658821917c2b2e
https://doi.org/10.1016/j.sse.2007.07.021
https://doi.org/10.1016/j.sse.2007.07.021
Publikováno v:
Solid-State Electronics. 51:1229-1237
In this paper, silicon-on-insulator MOSFETs and ring oscillators are, for the first time, fabricated and characterized on 1.5 μm-thick multilayered dielectric membranes, as a preliminary study for pressure sensing systems. Stresses were mechanically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::558867da48f55495639e50a587845b52
https://doi.org/10.1016/j.sse.2007.07.026
https://doi.org/10.1016/j.sse.2007.07.026
Autor:
Tsung Ming Chung, Ulf Södervall, J-P Raskin, Benoit Olbrechts, Stefan Bengtsson, Denis Flandre
Publikováno v:
Solid-State Electronics. 51:231-238
In this paper, a novel method for the fabrication of planar double-gate (DG) MOS devices is presented. Successfully fabricated single-gate and DG MOSFET devices on the same wafer have been fully characterized and their electrical performances compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a14fcb80d337f17997cba0bd5232cbe
https://doi.org/10.1016/j.sse.2007.01.017
https://doi.org/10.1016/j.sse.2007.01.017