Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Benoit Froment"'
Autor:
Alexandre Talbot, A. Toffoli, Simone Pokrant, D. Aime, Markus Muller, Alexandre Mondot, Yves Morand, G. Ribes, Francois Leverd, Thomas Skotnicki, Pascal Gouraud, Julien-Marc Roux, S. Descombes, Benoit Froment
Publikováno v:
Solid-State Electronics. 50:620-625
In this paper, we present an innovative way of fabricating MOS transistors with totally Ni-silicided (Ni-TOSI) gates without any CMP step before the full gate silicidation process. The combination of the use of a hard-mask-capped ultra-low initial Si
Publikováno v:
Materials Science and Engineering: B. :67-71
We propose a new approach to follow stress development during solid state reaction between a Ni thin film and Si (0 0 1). Substrate curvature measurements were performed simultaneously with X-ray diffraction at LURE synchrotron radiation facility. Th
Publikováno v:
Microelectronic Engineering. 76:318-323
Understanding and quantifying stress buildup during silicide formation from metal-silicon reaction is crucial for a proper modeling of stress fields in active areas. In this work we have performed in situ wafer curvature measurements and ex situ X-ra
Autor:
Emmanuel Augendre, Philippe Absil, A. De Keersgieter, Serge Biesemans, Malgorzata Jurczak, Ming-Fu Li, Benoit Froment, Hui Yu, G.P. Lousberg, Anne Lauwers
Publikováno v:
IEEE Electron Device Letters. 28:123-125
In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied experimentally and numerically. We demonstrate that the i
Autor:
François Pompanon, Pierre Fouillet, Sonia Janillon, Jean-Marie Delpuech, Benoit Froment, Michel Boulétreau
Publikováno v:
Environmental Toxicology and Chemistry. 17:1107-1113
Biological control agents such as entomophagus insects (e.g., Trichogramma sp.) are important components of integrated pest management (IPM) programs. Because pesticides are also an important component of IPM programs, it is essential to understand h
Autor:
M. Niwa, Hao Yu, Anne Lauwers, Howard L. Tigelaar, Axel Nackaerts, Serge Biesemans, T. Y. Hoffmann, Jorge A. Kittl, Thomas Kauerauf, A. Shickova, Thomas Chiarella, Aude Rothschild, R. Mitsuhashi, Maarten Rosmeulen, J. Ramos, Malgorzata Jurczak, Stephan Brus, Anabela Veloso, Philippe Absil, I. Satoru, Christa Vrancken, Benoit Froment, M.J.H. van Dal, Christoph Kerner
Publikováno v:
2006 International Electron Devices Meeting.
This work reports the first comprehensive evaluation of FUSI gates for manufacturability, covering the key aspects of integration, process control, reliability, matching, device design and circuit-level benefit. Thanks to a selective and controlled p
Autor:
M. Niwa, Jorge A. Kittl, Christoph Kerner, Howard L. Tigelaar, I. Satoru, T. Chiarella, Aude Rothschild, J. Ramos, Hao Yu, Christa Vrancken, Philippe Absil, T. Y. Hoffmann, Axel Nackaerts, S. Biesemans, M.J.H. van Dal, R. Mitsuhashi, Stephan Brus, Benoit Froment, Anne Lauwers, M. Jurczak, Anabela Veloso
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
We report record unloaded ring oscillator delay (17ps at VDD = 1.1V and 20pA/mum Ioff) using low power CMOS transistors with Ni-based fully silicided (FUSI) gates on HfSiON. This result comes from two key advancements over our previous report present
Autor:
S. Jullian, D. Delille, Yves Morand, R. Pantel, T. Farjot, V. Carron, C. Laviron, Florian Cacho, Benoit Froment, D. Bensahel, Abdelkader Souifi, D. Aime, N. Emonet, Aomar Halimaoui, Marc Juhel, R. Molins, Francois Wacquant, S. Descombes
Publikováno v:
Scopus-Elsevier
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. EuroSimE 2005.
Electron Devices Meeting, 2004. IEDM Technical Digest
Electron Devices Meeting, 2004. IEDM Technical Digest, 2004, pp.87-90, ⟨10.1109/IEDM.2004.1419073⟩
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. EuroSimE 2005.
Electron Devices Meeting, 2004. IEDM Technical Digest
Electron Devices Meeting, 2004. IEDM Technical Digest, 2004, pp.87-90, ⟨10.1109/IEDM.2004.1419073⟩
International audience; A wide workfunction (/spl Phi//sub m/) tuning range from 4.29eV to 4.99eV using total silicidation of doped polysilicon gate with nickel is presented. As, B and P but also N, Ge, Sb, In and co-implants, have been investigated
Autor:
D. Aime, Francois Wacquant, Georges Cailletaud, Patrice Gergaud, Herve Jaouen, S. Minoret, Abdelkader Souifi, Florian Cacho, Benoit Froment, C. Rivero, Olivier Thomas
Publikováno v:
MRS Proceedings. 875
Reactive diffusion of the Ni/Si system has been studied by annealing nickel thin film on (100) silicon crystal. The measurement of the NiSi sheet resistance as a function of the annealing temperature and the type of annealing (Rapid Thermal Annealing
Autor:
A. Pouydebasque, Benoit Froment, Frédéric Salvetti, Aomar Halimaoui, Francois Wacquant, A. Muller, C. Laviron, Rebha El Farhane
Publikováno v:
11th IEEE International Conference on Advanced Thermal Processing of Semiconductors. RTP 2003.
Arsenic implanted into silicon at 2 keV to a dose of 1/spl times/10/sup 15/ cm/sup -2/ is annealed over a wide range of temperature (from 700 to 1100/spl deg/C) and time (from spike to 240 sec) in a nitrogen ambient in order to investigate the variou