Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Benno Orschel"'
Publikováno v:
ECS Transactions. 2:33-41
Two-side Surface Photovoltage (TS-SPV) based on measuring SPV from both wafer sides is proposed as novel approach for silicon surface contamination monitoring. TS-SPV is applied to investigate the process of diffusion of implanted iron in lightly dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d19ad678897bc092fdaa81c9161fefa1
https://doi.org/10.1149/1.2408941
https://doi.org/10.1149/1.2408941
Publikováno v:
ECS Transactions. 1:25-32
One major source of metals contamination during high temperature processing are metals pre-deposited on the wafers surface before thermal treatment and metals cross- contamination from other wafers and/or furnace components. This study investigates t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67f926b36b89178214feda97b98aea44
https://doi.org/10.1149/1.2209378
https://doi.org/10.1149/1.2209378
Publikováno v:
ECS Transactions. 1:15-24
Two-side Surface Photovoltage (TS-SPV) based on measuring SPV from both wafer sides is proposed as novel approach for silicon surface contamination monitoring. TS-SPV is applied to investigate the process of diffusion of implanted iron in lightly dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eab24ef0b8649d0a810031ebaa7535c0
https://doi.org/10.1149/1.2209377
https://doi.org/10.1149/1.2209377
Publikováno v:
ECS Meeting Abstracts. :428-428
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7572803af10d0fa32f6510b8566a8d03
https://doi.org/10.1149/ma2005-02/11/428
https://doi.org/10.1149/ma2005-02/11/428
Publikováno v:
ECS Meeting Abstracts. :347-347
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4112580d58f84ec60ef84bdf52dc18
https://doi.org/10.1149/ma2006-01/7/347
https://doi.org/10.1149/ma2006-01/7/347
Publikováno v:
ECS Meeting Abstracts. :358-358
Photoluminescence (PL) was proposed as non-destructive technique for highly doped silicon material characterization. PL intensity had been observed to decrease for intentionally metal contaminated areas. PL studies were applied to iron contaminated s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd8a59742950d0c66408835b89d1f76b
https://doi.org/10.1149/ma2006-01/7/358
https://doi.org/10.1149/ma2006-01/7/358
We use photoluminescence to examine GaAs/(AlGa)As single quantum wells of different thickness grown by molecular beam epitaxy with and without growth interruptions. We observed distinctive peaks arising from the heavy‐hole exciton splitting associa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::908bd8e37fdd2f5c6490999721480c6e
https://infoscience.epfl.ch/record/110857
https://infoscience.epfl.ch/record/110857
