Výsledky vyhledávání - "Benno M. Blaschke"

Uniformly coated highly porous graphene/MnO

Autor: Simon, Drieschner, Maximilian von, Seckendorff, Elena Del, Corro, Jörg, Wohlketzetter, Benno M, Blaschke, Martin, Stutzmann, Jose A, Garrido

Publikováno v: Nanotechnology. 29(22)

Supercapacitors are called to play a prominent role in the newly emerging markets of electric vehicles, flexible displays and sensors, and wearable electronics. In order to compete with current battery technology, supercapacitors have to be designed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::6fa800fad1c0979ea995a976c59173dd
https://pubmed.ncbi.nlm.nih.gov/29513261

Zobrazit plný text záznamu

Lipid monolayer formation and lipid exchange monitored by a graphene field-effect transistor

Autor: Simon Drieschner, Benno M. Blaschke, Jose A. Garrido, Philip Böhm, Bert Nickel

Publikováno v: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname

Anionic and cationic lipids are key molecules involved in many cellular processes; their distribution in biomembranes is highly asymmetric, and their concentration is well-controlled. Graphene solution-gated field-effect transistors (SGFETs) exhibit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e34d8e3d3e52ae58a621c7ab1d57fd6
https://ddd.uab.cat/record/239274

Zobrazit plný text záznamu

Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitors

Autor: Jose A. Garrido, Maximilian von Seckendorff, Benno M. Blaschke, Jörg Wohlketzetter, Simon Drieschner, Elena del Corro, Martin Stutzmann

Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
instname
Recercat. Dipósit de la Recerca de Catalunya
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f00e9c58ede15323c978d274de0d06cc
http://hdl.handle.net/10261/200034

Zobrazit plný text záznamu

Photocatalytic Stability of Single- and Few-Layer MoS2

Autor: Bastian Miller, Benno M. Blaschke, Eric Parzinger, Joel W. Ager, Ursula Wurstbauer, Jose A. Garrido, Alexander W. Holleitner

Publikováno v: ACS Nano. 9:11302-11309

MoS2 crystals exhibit excellent catalytic properties and great potential for photocatalytic production of solar fuels such as hydrogen gas. In this regard, the photocatalytic stability of exfoliated single- and few-layer MoS2 immersed in water is inv

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c55dae0f89133b7cb281bb41ef48228f
https://doi.org/10.1021/acsnano.5b04979

Zobrazit plný text záznamu

Mapping brain activity with flexible graphene micro-transistors

Autor: Julia F. Weinert, Anton Guimerà-Brunet, Benno M. Blaschke, Rosa Villa, Lionel Rousseau, Oliver Kempski, Maria V. Sanchez-Vives, Axel Heimann, Núria Tort-Colet, Jose A. Garrido, Simon Drieschner

Publikováno v: 2D Materials
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname

arXiv:1611.05693v1.-- et al.
Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for reco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74e7d365b853da39b0712b6409775bf5

Zobrazit plný text záznamu

Induction heating-assisted repeated growth and electrochemical transfer of graphene on millimeter-thick metal substrates

Autor: Simon Drieschner, Max Seifert, Lucas H. Hess, Jose A. Garrido, Benno M. Blaschke

Publikováno v: Diamond and Related Materials. 47:46-52

article i nfo Chemical vapor deposition in a hot wall reactor is the most common technique for the production of large area single layer graphene. However, growth in this type of reactors is time consuming and the results are limited by the surface q

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e52e50c435ad5eef9604acc57bc3f88a
https://doi.org/10.1016/j.diamond.2014.05.007

Zobrazit plný text záznamu

High surface area graphene foams by chemical vapor deposition

Autor: Benno M. Blaschke, Evangelos Makrygiannis, Luigi Colombo, Michael Weber, Francesco Bonaccorso, Vittorio Morandi, Simon Drieschner, Josua Vieten, Jose A. Garrido, Jörg Wohlketzetter

Publikováno v: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
2D Materials
2D materials 3 (2016). doi:10.1088/2053-1583/3/4/045013
info:cnr-pdr/source/autori:Drieschner S.; Weber M.; Wohlketzetter J.; Vieten J.; Makrygiannis E.; Blaschke B.M.; Morandi V.; Colombo L.; Bonaccorso F.; Garrido J.A./titolo:High surface area graphene foams by chemical vapor deposition/doi:10.1088%2F2053-1583%2F3%2F4%2F045013/rivista:2D materials/anno:2016/pagina_da:/pagina_a:/intervallo_pagine:/volume:3
Digital.CSIC. Repositorio Institucional del CSIC
instname

et al.
Three-dimensional (3D) graphene-based structures combine the unique physical properties of graphene with the opportunity to get high electrochemically available surface area per unit of geometric surface area. Several preparation techniqu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e20593a7d7a6dd819d867413cd4adc91
https://ddd.uab.cat/record/189421

Zobrazit plný text záznamu

Flexible graphene transistors for recording cell action potentials

Autor: Gaëlle Lissourges, Jose A. Garrido, Benno M. Blaschke, Lionel Rousseau, Karolina Stoiber, Andrea Bonaccini Calia, Simon Drieschner, Martin Lottner

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
Digital.CSIC. Repositorio Institucional del CSIC
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

et al.
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baa07434b0813e1968259719832b8875
https://ddd.uab.cat/record/211124

Zobrazit plný text záznamu

Electrical coupling between cells and graphene transistors

Autor: Felix Rolf, Michael Sejer Wismer, Martin Lottner, Benno M. Blaschke, Lucas H. Hess, Jose A. Garrido, Max Seifert, Christoph Becker-Freyseng

Publikováno v: Small (Weinheim an der Bergstrasse, Germany). 11(14)

In this work, both experimental data and a model are presented on the coupling between living cells and graphene solution-gated field-effect transistors. Modified HEK 293 cells are successfully cultured on graphene transistor arrays and electrically

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::298bebd9a10c81da439ddb6cce4758ad
https://pubmed.ncbi.nlm.nih.gov/25408432

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání