Zobrazeno 1 - 5
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pro vyhledávání: '"Benkassou A"'
Publikováno v:
Journal of Electrical & Electronic Systems.
The hetero junctions GaN based offer an excellent potential for power applications at high frequency. This is due to the important energy of the bandgap and high saturation velocity of electrons. The high mobility transistors (HEMT - High Electron Mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bdb9f21025e862b47033efcdd2ba051
https://doi.org/10.4172/2332-0796.1000169
https://doi.org/10.4172/2332-0796.1000169
Publikováno v:
Electricity Utility Meters Report. 2003, p83-245. 163p. 2 Charts.
Publikováno v:
World Uninsulated OH Lines, Cables & Fittings Market. 2000, p137-226. 90p.
Publikováno v:
World Market Insulated Wires & Cables. 2000, p128-223. 96p.
Publikováno v:
Electrical Utilities of the World. 2002, p362-365. 4p.