Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Benjamin Venitucci"'
Autor:
Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjørn Rasmussen, Bertram Brovang, Fabrizio Berritta, Amber Heskes, Jing Li, Louis Hutin, Benjamin Venitucci, Benoit Bertrand, Maud Vinet, Yann-Michel Niquet, Anasua Chatterjee, Ferdinand Kuemmeth
Publikováno v:
New Journal of Physics, Vol 25, Iss 3, p 033023 (2023)
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-v
Externí odkaz:
https://doaj.org/article/295ab630356e4bdb8de156cc3098d49b
Autor:
Adrien Morel, Louis Hutin, B. Brun-Barriere, D. J. Niegemann, Romain Maurand, V. El Homsy, Yann-Michel Niquet, Yvain Thonnart, Maud Vinet, T. Bedecarrats, B. Paz, B. Jadot, Simon Zihlmann, B. Martinez Diaz, N. Rambal, M. Nurizzo, Marc Sanquer, A. Amisse, Benoit Bertrand, Matias Urdampilleta, R. Ezzouch, Gerard Billiot, E. Vincent, Heimanu Niebojewski, Xavier Jehl, Tristan Meunier, Pierre-André Mortemousque, C. Spence, Jing Li, A. Apra, Etienne Dumur, V. Thiney, E. Catapano, H. Jacquinot, Cécile Xinqing Yu, B. Klemt, L. Pallegoix, V. Schmitt, Candice Thomas, M. Casse, N. Piot, E. Chanrion, Benjamin Venitucci, G. Troncoso Fernandez-Bada, Vincent P. Michal, S. De Franceschi, Jean Charbonnier
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM)
2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco, United States. pp.30.1.1-30.1.4, ⟨10.1109/IEDM13553.2020.9371962⟩
66th International Electron Devices Meeting
66th International Electron Devices Meeting, Dec 2020, Online, United States. pp.30.1, ⟨10.1109/IEDM13553.2020.9371962⟩
2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco, United States. pp.30.1.1-30.1.4, ⟨10.1109/IEDM13553.2020.9371962⟩
66th International Electron Devices Meeting
66th International Electron Devices Meeting, Dec 2020, Online, United States. pp.30.1, ⟨10.1109/IEDM13553.2020.9371962⟩
International audience; We discuss the status, challenges and perspectives of "Quantum CAD" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb25e982ba1e0af6177d05b2bf65284e
http://arxiv.org/abs/2003.07592
http://arxiv.org/abs/2003.07592
Autor:
A. Amisse, Pierre-André Mortemousque, Xavier Jehl, Mikael Casse, Marc Sanquer, S. De Franceschi, Benjamin Venitucci, R. Ezzouch, Yvain Thonnart, Maud Vinet, A. Apra, Cameron Spence, L. Bourdet, H. Jacquinot, Baptiste Jadot, David J. Niegemann, E. Charion, Romain Maurand, Yann-Michel Niquet, A. Crippa, G. Pillonet, Tristan Meunier, Benoit Bertrand, Louis Hutin, N. Rambal, Gerard Billiot, Matias Urdampilleta
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We report the efforts, challenges and perspectives dedicated towards building a reliable spin read-out for Si spin qubit systems. We review several strategies that are pursued in the semiconductor quantum circuit community. We discuss their pros and
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in part
Autor:
Yann-Michel Niquet, Benjamin Venitucci
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2019, 99 (11), ⟨10.1103/PhysRevB.99.115317⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 99 (11), ⟨10.1103/PhysRevB.99.115317⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2019, 99 (11), ⟨10.1103/PhysRevB.99.115317⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 99 (11), ⟨10.1103/PhysRevB.99.115317⟩
We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We deri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::048226634dd044ff6b472c3831aac9f1
https://hal.archives-ouvertes.fr/hal-02138943
https://hal.archives-ouvertes.fr/hal-02138943
Autor:
S. De Franceschi, B. Jadot, Y.-J. Kim, A. Amisse, H. Bohuslavskyi, Benoit Bertrand, Tristan Meunier, Sylvain Barraud, V. Mazzocchi, C. Spence, Marc Sanquer, E. Chanrion, L. Bourdet, Louis Hutin, Maud Vinet, A. Crippa, Jean-Michel Hartmann, Romain Maurand, Yann-Michel Niquet, Benjamin Venitucci, Matias Urdampilleta, Pierre-André Mortemousque, Xavier Jehl
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the b
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98 (15), ⟨10.1103/PhysRevB.98.155319⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (15), ⟨10.1103/PhysRevB.98.155319⟩
Physical Review B
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98 (15), ⟨10.1103/PhysRevB.98.155319⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (15), ⟨10.1103/PhysRevB.98.155319⟩
Physical Review B
We discuss the modeling of the electrical manipulation of spin qubits in the linear-response regime where the Rabi frequency is proportional to the magnetic field and to the radio-frequency electric field excitation. We show that the Rabi frequency c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c9316bd7c910dfb8012fae133fa55e0
https://hal.science/hal-02141900
https://hal.science/hal-02141900
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2018, 97 (19), pp.195423. ⟨10.1103/PhysRevB.97.195423⟩
Physical Review B, American Physical Society, 2018, 97 (19), pp.195423. ⟨10.1103/PhysRevB.97.195423⟩
Irradiating a Josephson junction with microwaves can operate not only on the amplitude but also on the phase of the Josephson current. This requires breaking time inversion symmetry, which is achieved by introducing a phase lapse between the microwav
Publikováno v:
Physical Review B. 103(4)
Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of such qubits