Zobrazeno 1 - 8
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pro vyhledávání: '"Benjamin T.H. Lee"'
Publikováno v:
ACS Omega, Vol 5, Iss 41, Pp 26497-26503 (2020)
ACS Omega
ACS Omega
Photoetching of n-type silicon induces a photoluminescent (PL) layer containing nanocrystals on the irradiated surface, usually through band gap absorption (wavelength
Publikováno v:
SSRN Electronic Journal.
Wafer bonding processing typically employs thermal energy to fuse two surfaces by stimulating atomic interdiffusion at high temperatures. However, we found that the fusion bonding of copper and silicon can occur at an extremely low temperature in cry
Publikováno v:
ACS Applied Nano Materials. 1:2414-2420
The fully depleted silicon-on-insulator (FD-SOI) wafer is the core material of the FD-SOI technology used for manufacturing the applications with ultralow energy consumption for internet of things, artificial intelligence, automotive, and wearable de
Publikováno v:
ECS Transactions. 80:1113-1125
Autor:
Benjamin T.H. Lee, C. C. Chiang
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports
Scientific Reports
A silicon layer that is tens of micrometers thick on a handle substrate is desired for applications involving power devices, microelectromechanical systems (MEMS), highly efficient silicon solar cells (
Autor:
Benjamin T.H. Lee, M. C. Lin
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P323-P325
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
One of the things that characterizes the fully depleted silicon-on-insulator (FD-SOI) devices is the ultralow energy consumption. It lets FD-SOI wafers be one of the best candidate materials for manufacturing 5G devices for the Internet of things (Io
Autor:
Benjamin T.H. Lee
Publikováno v:
Recent patents on nanotechnology. 11(1)
BACKGROUND A hydrogen-based Ion-Cut layer-transfer technique, the so-called Ion-Cut or Smart-Cut processing, has been used in transferring a semiconductor membrane onto a desired substrate to reveal unique characteristics on a nanoscale size and to b