Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Benjamin T. Voegeli"'
Publikováno v:
CICC
This paper presents a new spread spectrum clock generator (SSCG) circuit for EMI reduction. The proposed design adopts a standard integer-N phased locked loop (PLL) with two dual-voltage-controlled oscillators (VCOs). A frequency modulation loop is i
Autor:
Peter B. Gray, P. Chapman, M. Gordon, R. Previty-Kelly, Douglas B. Hershberger, Robert M. Rassel, Alan F. Norris, Alvin J. Joseph, S.L. Von Bruns, Mattias E. Dahlstrom, Michael J. Zierak, Michael L. Gautsch, J. Dunn, Panglijen Candra, Natalie B. Feilchenfeld, J. Lukaitis, Renata Camillo-Castillo, S. St Onge, Benjamin T. Voegeli, K. Watson, Nicholas Theodore Schmidt, Z.X. He
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particula
Autor:
J. Dunn, Qizhi Liu, Ramana M. Malladi, Peter B. Gray, Ping-Chuan Wang, Kenneth J. Stein, Douglas B. Hershberger, R. Previti-Kelly, Panglijen Candra, Ephrem G. Gebreselasie, Benjamin T. Voegeli, K. Watson, Wade J. Hodge, Peter J. Lindgren, Zhong-Xiang He, Alvin J. Joseph
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on
Autor:
Peter B. Gray, J. Dunn, Alvin J. Joseph, BethAnn Rainey, R. Previti-Kelly, Natalie B. Feilchenfeld, Benjamin T. Voegeli, S. St Onge, Mattias E. Dahlstrom
Publikováno v:
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
An isolated vertical PNP BJT with fT of 28 GHz and f MAX of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors' knowledge, the highest fT ever published for a homojunction PN
Autor:
A.D. Strieker, Natalie B. Feilchenfeld, Benjamin T. Voegeli, K. Watson, J. Dunn, J. Rascoe, K. Newton, Peter B. Gray, S. St Onge, Nicholas Theodore Schmidt, B.A. Rainey
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
An isolated vertical PNP BJT with f/sub T/ and f/sub MAX/ of 20GHz available as a modular component in a 0.18/spl mu/m SiGe BiCMOS technology is described. The VPNP device is fabricated using a low complexity integration scheme and is optimized to co
Autor:
Benjamin T. Voegeli, B.A. Rainey, Michael L. Gautsch, Natalie B. Feilchenfeld, Andreas D. Stricker
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
Using TCAD simulations the collector-base break down voltage (BVcbo) of a vertical PNP transistor implemented in IBM's 0.18 /spl mu/m BiCMOS SiGe 7WL technology was optimized. A novel two dimensional (2D) ion implant scattering phenomenon at the edge
Autor:
J. Rascoe, Ebenezer E. Eshun, Benjamin T. Voegeli, S. St Onge, Douglas D. Coolbaugh, P. Demag, Peter J. Geiss, Michael J. Zierak, Natalie B. Feilchenfeld, A. Norris, Bradley A. Orner, David C. Sheridan, J. Dunn, T. Larsen, J. Trappasso, J. He, J. Greco, R. Hussain, V. Patel, Michael L. Gautsch, V. Ramachandrian, Peter B. Gray, Wade J. Hodge, Douglas B. Hershberger, Ryan Wayne Wuthrich, Robert M. Rassel, Louis D. Lanzerotti, D. Jordan, Steven H. Voldman
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that of