Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Benjamin Munstermann"'
Autor:
Michihiko Suhara, Anselme Tchegho, Werner Prost, Gregor Keller, Benjamin Munstermann, Franz-Josef Tegude
InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. For signal detection we present a device with an additional third barrier to create an unsymmetr
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07df6a2be7b29f4b0ef6fbdf6d296932
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84882323047
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Publikováno v:
2012 International Conference on Indium Phosphide and Related Materials.
InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. We present a modification with an additional third barrier to create an unsymmetrical I/V-charac
Publikováno v:
2012 International Conference on Indium Phosphide and Related Materials.
This paper presents an optimized RTD-HBT single ended voltage controlled oscillator topology with increased tuning range and improved frequency stability at 20 GHz oscillation frequency. By connecting the RTD to the emitter of an HBT, a larger voltag
Autor:
I. Regolin, Takao Waho, Gregor Keller, Werner Prost, Andrey Lysov, Ryosuke Oda, Benjamin Munstermann, Satoshi Taniyama, Rene Richter, K. Blekker, O. Benner
We report on the fabrication and analysis of basic digital circuits containing InAs nanowire transistors on a host substrate. The nanowires were assembled at predefined positions by means of electric field-assisted self-assembly within each run gener
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https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84864543094
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Autor:
Dudu Zhang, A. Poloczek, Franz-Josef Tegude, Tobias Feldengut, Benjamin Munstermann, Ralf Geitmann, Werner Prost
A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In-0.52(AlyGa1-y)(0.48)As layer with 0 < y < y(max). This ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d6bfc27adb6e3be5525f97d685e29a0
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=77955617644
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=77955617644
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials.
We report on a dual-wavelength detector consisting of two stacked PIN-diodes with a common center terminal. The aspect of electrical and optical crosstalk in dependence of layer parameters is discussed and the RF-performance is investigated on fabric
The large signal behaviour of resonant tunnelling diodes (RTD) in K-band oscillators is investigated in order to optimize the RF-output power of RTD-based voltage controlled oscillators. Circuit simulations based on a scaleable large-signal RTD model
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