Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Benjamin McEwen"'
Autor:
Alireza Lanjani, Benjamin McEwen, Vincent Meyers, David Hill, Winston K. Chan, Emma Rocco, Shadi Omranpour, F. Shahedipour-Sandvik
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-6 (2024)
Quantum well infrared photodetectors (QWIPs) have been demonstrated to be a suitable candidate for IR detection applications. These detectors attracted increasing interest due to their design flexibility and broad spectral absorption from short wave
Externí odkaz:
https://doaj.org/article/0557f4513c90445f82b371906fa85d8b
Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors
Autor:
Emma Rocco, Jonathan Marini, Kasey Hogan, Vincent Meyers, Benjamin McEwen, L. Douglas Bell, F. Shahedipour-Sandvik
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 2, Pp 1-12 (2022)
We review the recent progress to achieve air stable III-nitride photocathodes for applications as photon detectors. High conductivity p-type films are critically important to realize high quantum efficiency (QE) photocathodes with effective negative
Externí odkaz:
https://doaj.org/article/5a7bc1fce6c440d5abeefd7ae3b7852f
Autor:
Kasey Hogan, Miguel Rodriguez, Emma Rocco, Vincent Meyers, Benjamin McEwen, F. Shadi Shahedipour-Sandvik
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085110-085110-6 (2020)
Here, we report on the application of an electron source with high accelerating voltage (62 kV–200 kV) to simulate betavoltaic power generation capabilities of a planar GaN PIN (p-GaN/i-GaN/n-GaN) device. The in situ electrical characterization rep
Externí odkaz:
https://doaj.org/article/3abb963fd532480d8e24ded1aa384394
Autor:
Benjamin McEwen, Michael A. Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis O. Demchenko, Fatemeh Shahedipour-Sandvik
Publikováno v:
ACS Applied Electronic Materials. 4:3780-3785
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b90d7a99cede750fbfb7e274d34a90b9
https://doi.org/10.1021/acsaelm.1c01276
https://doi.org/10.1021/acsaelm.1c01276
Autor:
Michael Alexander Reshchikov, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis O. Demchenko, Benjamin McEwen, Shadi Shahedipour-Sandvik
Publikováno v:
physica status solidi (b).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978410c57d0d92e6ba645128ab824370
https://doi.org/10.1002/pssb.202300131
https://doi.org/10.1002/pssb.202300131
Autor:
Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, Shadi Shahedipour-Sandvik
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::780eb97ac3db14c1e273f629e6d82629
https://doi.org/10.1117/12.2626491
https://doi.org/10.1117/12.2626491
Autor:
Michael Alexander Reshchikov, Mykhailo Vorobiov, Oleksandr Andrieiev, Benjamin McEwen, Emma Rocco, Vincent Meyers, Denis O. Demchenko, F. Shadi Shahedipour-Sandvik
Publikováno v:
physica status solidi (b). :2200487
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271e42cc8adc1577aeac4395550a9a36
https://doi.org/10.1002/pssb.202200487
https://doi.org/10.1002/pssb.202200487
Autor:
Emma Rocco, Fatemeh Shahedipour-Sandvik, J. Andres Melendez, Roger J Reinertsen, Benjamin McEwen, Kasey Hogan, Isra Mahaboob, Nathaniel C. Cady
Publikováno v:
Exp Biol Med (Maywood)
The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3d8f20ae4899e798b11fc4c9a9ca1d2
https://pubmed.ncbi.nlm.nih.gov/33203229
https://pubmed.ncbi.nlm.nih.gov/33203229
Autor:
Vincent Meyers, Michael A. Reshchikov, Kasey Hogan, Fatemeh Shahedipour-Sandvik, Baishakhi Mazumder, Steven W. Novak, Sean Tozier, Benjamin McEwen, L. Douglas Bell, Isra Mahaboob, Emma Rocco, Olivia Licata
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports
Scientific Reports
We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69a45b6d93586d9d555b68edc778d8a0
https://doi.org/10.1038/s41598-020-58275-1
https://doi.org/10.1038/s41598-020-58275-1
Autor:
Michael A. Derenge, Vincent Meyers, Kasey Hogan, Vlad Sklyar, Benjamin McEwen, Emma Rocco, M. Shevelev, Shadi Shahedipour-Sandvik, Kenneth A. Jones
Publikováno v:
ECS Meeting Abstracts. :998-998
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d923eddc0698df7fd399195ab561cca8
https://doi.org/10.1149/ma2021-0234998mtgabs
https://doi.org/10.1149/ma2021-0234998mtgabs