Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Benjamin M. Kupp"'
Autor:
Jeffrey L. Blackburn, Benjamin M. Kupp, Prasana Sahoo, Dmitri V. Voronine, Sanjini U. Nanayakkara, Thomas M. Wallis, Hanyu Zhang, Elisa M. Miller, Pavel Kabos, Samuel Berweger
Publikováno v:
ACS Nano. 14:14080-14090
The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b975de656c2094cf9db6d2c2528446f
https://doi.org/10.1021/acsnano.0c06745
https://doi.org/10.1021/acsnano.0c06745
Autor:
Samuel, Berweger, Hanyu, Zhang, Prasana K, Sahoo, Benjamin M, Kupp, Jeffrey L, Blackburn, Elisa M, Miller, Thomas M, Wallis, Dmitri V, Voronine, Pavel, Kabos, Sanjini U, Nanayakkara
Publikováno v:
ACS nano. 14(10)
The optical and electronic properties of 2D semiconductors are intrinsically linked
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::28ea6ab2a3db998f6b8d805af7d64ec2
https://pubmed.ncbi.nlm.nih.gov/33044054
https://pubmed.ncbi.nlm.nih.gov/33044054
Autor:
Yixiu Wang, Peide D. Ye, Joanna M. Atkin, Pavel Kabos, Clayton B. Casper, Samuel Berweger, Thomas M. Wallis, Wenzhuo Wu, Benjamin M. Kupp, Gang Qiu
Publikováno v:
Applied Physics Letters. 117:253102
Tellurene—the 2D form of elemental tellurium—provides an attractive alternative to conventional 2D semiconductors due to its high bipolar mobilities, facile solution processing, and the possibility of dopant intercalation into its 1D van der Waal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e76dc0c2c55616c1433ecdac970826b
https://doi.org/10.1063/5.0025955
https://doi.org/10.1063/5.0025955
Autor:
Stephen McDonnell, Sarah M. Eichfeld, Lorraine Hossain, Robert M. Wallace, Xin Peng, Ning Lu, Moon J. Kim, Robert A. Burke, Benjamin M. Kupp, Joan M. Redwing, Jie Li, Joshua A. Robinson, Theresa S. Mayer, Aleksander F. Piasecki, Yu-Chuan Lin, Angelica Azcatl, A. Glen Birdwell
Publikováno v:
ACS nano. 9(2)
Tungsten diselenide (WSe2) is a two-dimensional material that is of interest for next-generation electronic and optoelectronic devices due to its direct bandgap of 1.65 eV in the monolayer form and excellent transport properties. However, technologie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d2721832404461bdbdf8be98ef5db9d
https://pubmed.ncbi.nlm.nih.gov/25625184
https://pubmed.ncbi.nlm.nih.gov/25625184