Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Benjamin M. Fregoso"'
Autor:
Yangyang Liu, Gyanendra Dhakal, Anup Pradhan Sakhya, John E. Beetar, Firoza Kabir, Sabin Regmi, Dariusz Kaczorowski, Michael Chini, Benjamin M. Fregoso, Madhab Neupane
Publikováno v:
Communications Physics, Vol 5, Iss 1, Pp 1-6 (2022)
Topological nodal line semimetals are characterised by band crossings along a line, or closed loop inside, of the Brillouin zone and belong to a larger family of topological semimetals. Here, using time-resolved angle resolved photoemission spectrosc
Externí odkaz:
https://doaj.org/article/60668db5ba3b444bb49848f0caecab7e
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
Above band-gap photovoltage could be achieved in materials with a net polarization. Here, Cooket al. compute the contribution to the shift current from the band edge and identify two classes of shift current photovoltaics materials, GeS and ferroelec
Externí odkaz:
https://doaj.org/article/53ae5323c098430697917c99a2c08110
Publikováno v:
Materials Research Express, Vol 10, Iss 3, p 035003 (2023)
We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin–orbit coupling
Externí odkaz:
https://doaj.org/article/a5ce1be1b3c0469ab6e767b1d7d766f0
Publikováno v:
Philosophical Magazine. 103:350-368
Autor:
Benjamin M. Fregoso
Publikováno v:
Physical Review B. 106
We compute the electric spin susceptibility of Bloch electrons with spin-orbit coupling to second order. We find that it is possible to generate a nonequilibrium spin polarization in the bulk of non-magnetic inversion-symmetric materials using linear
Publikováno v:
Physical Review B. 105
We study the temperature relaxation dynamics of nodal-line semimetals after a sudden excitation in the presence of acoustic and optical phonon modes. We find that the nodal line constrains the electron momenta in scattering processes and, as a result
Publikováno v:
Physical Review Letters. 126
Autor:
Yuxia Shen, Benjamin M. Fregoso, Guangjiang Li, Lyubov V. Titova, Ying Qin, Kateryna Kushnir, Sefaattin Tongay
Publikováno v:
ACS Applied Materials & Interfaces. 11:5492-5498
Theory predicts that a large spontaneous electric polarization and concomitant inversion symmetry breaking in GeSe monolayers result in a strong shift current in response to their excitation in the visible range. Shift current is a coherent displacem
Publikováno v:
Reviews of Modern Physics
We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, sof
Autor:
Benjamin M. Fregoso
Publikováno v:
Physical Review B. 102