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Publikováno v:
Microelectronics Reliability. 54:2675-2681
An early life failure mechanism was discovered on a 0.25-µm 40 V GaN FET technology. Through accelerated life testing (ALT), it was determined that the early life failure mechanism was thermally accelerated with a high activation energy, which means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf3b3e8c28067d16fbcae79656a28a41
https://doi.org/10.1016/j.microrel.2014.09.017
https://doi.org/10.1016/j.microrel.2014.09.017
