Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Benjamin L. Amey"'
Publikováno v:
Solid-State Electronics. 111:141-146
The physical origin of majority charge carrier fluctuations in the SiO2 interface of Si at accumulation has been investigated and analyzed for differently processed and voltage-rated reduced surface field (RESURF), lateral-double-diffused MOS (LDMOS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f2ad0bb039c5b64a80f49a5f42586b4
https://doi.org/10.1016/j.sse.2015.05.043
https://doi.org/10.1016/j.sse.2015.05.043
Autor:
Fan-Chi Hou, Pinghai Hao, Benjamin L. Amey, Zeynep Celik-Butler, Xu Cheng, Sameer Pendharkar, M. I. Mahmud, Purushothaman Srinivasan
Publikováno v:
IEEE Transactions on Electron Devices. 60:677-683
A physics-based model has been implemented to describe the low-frequency noise behavior in differently processed reduced-surface-field lateral double-diffused MOS devices. The developed model is based upon the correlated carrier number and the mobili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d252c26d95045c7716ba7ceb83b7ec7b
https://doi.org/10.1109/ted.2012.2226178
https://doi.org/10.1109/ted.2012.2226178
Autor:
Purushothaman Srinivasan, Pinghai Hao, Sameer Pendharkar, Benjamin L. Amey, Zeynep Celik-Butler, M. I. Mahmud, F. Hou
Publikováno v:
IEEE Electron Device Letters. 33:107-109
Low-frequency noise in double reduced-surface-field lateral-double-diffused-MOS devices has been measured, and the effect of dc stressing is analyzed. The noise components contributing from the extended drain regions under the gate and field oxides w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7603555a2ba8f5a68cf19d81d06cceba
https://doi.org/10.1109/led.2011.2171473
https://doi.org/10.1109/led.2011.2171473
Autor:
Sameer Pendharkar, F. Hou, Xu Cheng, Benjamin L. Amey, Zeynep Celik-Butler, Purushothaman Srinivasan, M. Iqbal Mahmud, Pinghai Hao, Weixiao Huang
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
1/ƒ noise analysis is implemented as a quantitative measure for the dielectric / silicon interface related reliability and degradation in RESURF lateral double-diffused MOS transistors. The effect of DC stress on 1/ƒ noise performance as well as on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6629ff1cc5b18896858882775ff74086
https://doi.org/10.1109/ispsd.2012.6229085
https://doi.org/10.1109/ispsd.2012.6229085
Autor:
Benjamin L. Amey, Zeynep Celik-Butler, Sameer Pendharkar, Pinghai Hao, F. Hou, Purushothaman Srinivasan, Weixiao Huang, M. Iqbal Mahmud, Xu Cheng
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
1/ƒ noise observed on differently processed high-power, RESURF LDMOS transistors has been correlated with degradation in the drain current and transconductance induced by DC stressing. The effects of stressing are analyzed on individual resistance a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44d1dffcfc2ed9d1a59cf4f1676c4cf
https://doi.org/10.1109/irps.2012.6241934
https://doi.org/10.1109/irps.2012.6241934
Autor:
F. Hou, M. I. Mahmud, Pinghai Hao, Weixiao Huang, Benjamin L. Amey, Zeynep Celik-Butler, Tahira Khan
Publikováno v:
2011 21st International Conference on Noise and Fluctuations.
Low frequency noise (LFN) characteristics of high voltage double reduced-surface-field LDMOS with SiO 2 as gate dielectric is investigated and the effect of DC stressing has been observed. It has been found that the LDMOS does not follow typical nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d2f028afb52a289bcbd561ae3c9e66
https://doi.org/10.1109/icnf.2011.5994341
https://doi.org/10.1109/icnf.2011.5994341
Autor:
Benjamin L. Amey
Publikováno v:
2009 52nd IEEE International Midwest Symposium on Circuits and Systems.
In some systems, it is necessary to turn on a low side driver when the load is properly connected to a power supply, even if the normal gate drive power supply is off or disconnected. This necessitates deriving the gate supply voltage for the output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8fb38d53261c499af60a2641eb9cb9
https://doi.org/10.1109/mwscas.2009.5235923
https://doi.org/10.1109/mwscas.2009.5235923