Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Benjamin Krauss"'
Publikováno v:
Zeitschrift für Geographiedidaktik, Vol 45, Iss 2 (2017)
Geographielehrkräfte scheinen zwar über Wissen zu kompetenzorientiertem Unterricht (KU) in der Geographie zu verfügen, setzen dieses Wissen jedoch oft nicht im Unterricht um. Diese Lücke zwischen Theorie und Handeln ist erklärungsbedürftig. Dah
Externí odkaz:
https://doaj.org/article/a62ff7e7919f4aafbe4274ffe3ab4a0b
Publikováno v:
Cureus
Shoulder pain is a common and painful patient condition. Unfortunately, diagnostic imaging of shoulder pain in the emergency department (ED) is often limited to radiography. While diagnostic for fractures and dislocations, drawbacks of radiography in
Publikováno v:
Zeitschrift für wirtschaftlichen Fabrikbetrieb. 114:580-583
Kurzfassung Um die Effizienz in der diskreten Produktion zu erhöhen und ungenutzte Potenziale in einer Fabrik zu identifizieren, können mehrwertbringende digitale Services eingesetzt werden. Der vorliegende Beitrag befasst sich mit den Chancen dies
Autor:
Bertrand I. Halperin, Dmitry A. Abanin, Benjamin Krauss, Amir Yacoby, Jurgen H. Smet, Benjamin E. Feldman, Andrei Levin
Publikováno v:
Physical review letters. 111(7)
Graphene and its multilayers have attracted considerable interest because their fourfold spin and valley degeneracy enables a rich variety of broken-symmetry states arising from electron-electron interactions, and raises the prospect of controlled ph
Skipping the Odds When confined to a plane and placed in a magnetic field at low temperatures, electrons are separated by energy into the so-called Landau levels; adding an extra electron after a Landau level that has been filled is costly. In some s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee370207c7fedc40e89fd50fa9d85d6f
http://arxiv.org/abs/1201.5128
http://arxiv.org/abs/1201.5128
Autor:
R. Thomas Weitz, Christian R. Ast, Klaus Kern, Benjamin Krauss, Jurgen H. Smet, C. Riedl, Hartmut Höchst, Ulrich Starke, Dong Su Lee, Isabella Gierz, Takayuki Suzuki
Publikováno v:
Physical Review B. 81
The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybri
Autor:
Camilla Coletti, Jurgen H. Smet, C. Riedl, Dong Su Lee, Ulrich Starke, L. Patthey, Benjamin Krauss, K. von Klitzing
Publikováno v:
Physical Review B. 81
Epitaxial graphene on SiC(0001) suffers from strong intrinsic $n$-type doping. We demonstrate that the excess negative charge can be fully compensated by noncovalently functionalizing graphene with the strong electron-acceptor tetrafluorotetracyanoqu
Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers as well a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c38d52a7d7349c0c6c6e73203761ed1
http://arxiv.org/abs/1001.1814
http://arxiv.org/abs/1001.1814
Autor:
Péter Nemes-Incze, Viera Skakalova, Jurgen H. Smet, Benjamin Krauss, László P. Biró, Klaus von Klitzing
Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce devices wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7dd9a6ffe7c23d39a622a083ee72c359
Autor:
Jurgen H. Smet, Benjamin Krauss, Timm Lohmann, Hagen Klauk, Myrsini Lafkioti, Ute Zschieschang, Klaus von Klitzing
The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend strongly on processing details and the substrate morphology. Moreover
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3073975745637e2be5a0fe32fb20e55
http://arxiv.org/abs/0910.2596
http://arxiv.org/abs/0910.2596