Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Benjamin K. Chang"'
Publikováno v:
npj Computational Materials, Vol 8, Iss 1, Pp 1-8 (2022)
Abstract Charge transport in organic molecular crystals (OMCs) is conventionally categorized into two limiting regimes − band transport, characterized by weak electron-phonon (e-ph) interactions, and charge hopping due to localized polarons formed
Externí odkaz:
https://doaj.org/article/e2a859d6a50c45e0bc0f5520602c5631
In materials with strong electron-phonon (e-ph) interactions, charge carriers can distort the surrounding lattice and become trapped, forming self-localized (small) polarons. We recently developed an ab initio approach based on canonical transformati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c116eb5842b547b51e34d553107b5a49
https://resolver.caltech.edu/CaltechAUTHORS:20220329-173615663
https://resolver.caltech.edu/CaltechAUTHORS:20220329-173615663
Autor:
Wen-Pin Hsieh, Hsiang-Ting Lien, Li-Chyong Chen, Sun-Tang Chang, Mei-Yin Chou, Kuei-Hsien Chen, Yaw-Wen Yang, Tzu-Hsien Shen, Deniz P. Wong, Benjamin K. Chang, Takao Mori, Peter Rogl, Chia-Hua Chien, Ta-Lei Chou, Ming-Wen Chu, Yang-Yuan Chen, Yi-ren Liu, Chin-Sheng Pang, Gerda Rogl, M. Aminzare, Yohei Kakefuda
Publikováno v:
ACS Applied Electronic Materials. 1:2619-2625
Germanium tellurides and its pseudo binary compounds offer interesting properties that are important in thermoelectric and phase-change applications. Despite being a class of materials under scrutiny since its discovery, unique properties and functio
Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::825256525c74acb9f37d59aba0f738a3
Autor:
Benjamin K Chang, 張光遠
105
Ge-Sb-Te (GST) compounds have been known for their application to non-volatile memories due to their good phase change property. Recently, their applicability to thermoelectric usage has also been discussed. It has been shown that by proper
Ge-Sb-Te (GST) compounds have been known for their application to non-volatile memories due to their good phase change property. Recently, their applicability to thermoelectric usage has also been discussed. It has been shown that by proper
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/54380553507765878123