Zobrazeno 1 - 10
of 200
pro vyhledávání: '"Benjamin J. Blalock"'
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 13, Iss 3, p 47 (2023)
A programmable, energy-efficient analog hardware implementation of a multilayer perceptron (MLP) is presented featuring a highly programmable system that offers the user the capability to create an MLP neural network hardware design within the availa
Externí odkaz:
https://doaj.org/article/4f1cdfe2a1434f32840d8582379451e3
Autor:
Handong Gui, Zheyu Zhang, Leon M. Tolbert, Benjamin J. Blalock, Jiahao Niu, Benjamin B. Choi, Ruirui Chen, Daniel Costinett, Fei Wang
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:3468-3478
Three-level (3L) converters are more susceptible to parasitics compared with two-level converters because of their complicated structure with multiple switching loops. In this article, the methodology of busbar layout design for 3L converters based o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb60bd1794e4cdb82ba262c5427b305c
https://doi.org/10.1109/jestpe.2020.2999403
https://doi.org/10.1109/jestpe.2020.2999403
Autor:
Benjamin B. Choi, Handong Gui, Benjamin J. Blalock, Daniel Costinett, Zheyu Zhang, Leon M. Tolbert, Ruirui Chen, Jiahao Niu, Fei Wang
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:4160-4172
To understand the limitation of maximizing the switching speed of SiC low-current discrete devices and high-current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d439c2a6e3bc0a373815729291ee109
https://doi.org/10.1109/jestpe.2019.2937855
https://doi.org/10.1109/jestpe.2019.2937855
Autor:
Handong Gui, Jiahao Niu, Benjamin J. Blalock, Ren Ren, Ruirui Chen, Fei Fred Wang, Benjamin B. Choi, Daniel Costinett, Leon M. Tolbert, Zheyu Zhang, Bo Liu
Publikováno v:
IEEE Transactions on Power Electronics. 35:7947-7959
This article establishes an analytical model for the device drain–source overvoltage related to the two loops in three-level active neutral point clamped (3L-ANPC) converters. Taking into account the nonlinear device output capacitance, two common
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3d16321c48852159935f4ae29f1a0b4
https://doi.org/10.1109/tpel.2019.2962621
https://doi.org/10.1109/tpel.2019.2962621
Autor:
Zhou Dong, Handong Gui, Fei Wang, Daniel Costinett, Jiahao Niu, Haiguo Li, Benjamin J. Blalock, Leon M. Tolbert, Craig Timms, Benjamin B. Choi, Zheyu Zhang, Ruirui Chen, Ren Ren
Publikováno v:
IEEE Transactions on Power Electronics. 35:5670-5682
To better support the superconducting propulsion system in the future aircraft applications, the technologies of high-power high switching frequency power electronics systems at cryogenic temperatures should be investigated. This article presents the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c6b8fb583adca013fe8b2408d55e430
https://doi.org/10.1109/tpel.2019.2949711
https://doi.org/10.1109/tpel.2019.2949711
Autor:
Daniel Costinett, Benjamin B. Choi, Handong Gui, Benjamin J. Blalock, Fei Fred Wang, Leon M. Tolbert, Zheyu Zhang, Ruirui Chen, Jiahao Niu
Publikováno v:
IEEE Trans Power Electron
In order to apply power electronics systems to applications such as superconducting systems under cryogenic temperatures, it is necessary to investigate the characteristics of different parts in the power electronics system. This article reviews the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2ed1962342e1ae0bcd840f10a14e8c9
https://doi.org/10.1109/tpel.2019.2944781
https://doi.org/10.1109/tpel.2019.2944781
Autor:
Leon M. Tolbert, Handong Gui, Benjamin B. Choi, Ruirui Chen, Zheyu Zhang, Jiahao Niu, Daniel Costinett, Benjamin J. Blalock, Fei Wang
Publikováno v:
IEEE Transactions on Power Electronics. 35:4411-4425
Paralleling three phase three-level inverters is gaining popularity in industrial applications. However, analytical models for the harmonics calculation of a three-level neutral point clamped (NPC) inverter with popular space vector modulation (SVM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7fbfc9682f191ee162c790de19d502e
https://doi.org/10.1109/tpel.2019.2939727
https://doi.org/10.1109/tpel.2019.2939727
Autor:
Fei Wang, Ruirui Chen, Jiahao Niu, Leon M. Tolbert, Handong Gui, Ren Ren, Benjamin B. Choi, Daniel Costinett, Zheyu Zhang, Benjamin J. Blalock
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:66-76
In order to evaluate the feasibility of newly developed gallium nitride (GaN) devices in a cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN high-electron mobility transistor (GaN HEMT) at cryogenic temperatures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ddba3abc3d7f8331f35051f694bef22
https://doi.org/10.1109/jestpe.2019.2949953
https://doi.org/10.1109/jestpe.2019.2949953
Publikováno v:
IEEE Transactions on Power Electronics. 34:9392-9403
As wide-bandgap (WBG) devices and applications move from niche to mainstream, a new generation of engineers trained in this area is critical to continue the development of the field. This paper introduces a new hands-on course in characterization of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e39b5d7d98ef03dfaf05d5f95cf275
https://doi.org/10.1109/tpel.2018.2890615
https://doi.org/10.1109/tpel.2018.2890615
Autor:
Jacob Dyer, Zheyu Zhang, Xuanlyu Wu, Fei Wang, Leon M. Tolbert, Daniel Costinett, Benjamin J. Blalock
Publikováno v:
IEEE Transactions on Power Electronics. 34:7922-7932
Junction temperature is an important design/operation parameter, as well as, a significant indicator of device's health condition for power electronics converters. Compared to its silicon (Si) counterparts, it is more critical for silicon carbide (Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3e804a5321d2c1982ef4e411cfa8eb
https://doi.org/10.1109/tpel.2018.2879511
https://doi.org/10.1109/tpel.2018.2879511