Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Benjamin Iñiguez"'
Autor:
Laurie E. Calvet, Sami El‐Nakouzi, Zonglong Li, Yerin Kim, Amer Zaibi, Patryk Golec, Ie Mei Bhattacharyya, Yvan Bonnassieux, Lina Kadura, Benjamin Iñiguez
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 12, Pp n/a-n/a (2024)
Abstract There is increasing interest in using specialized circuits based on emerging technologies to develop a new generation of smart devices. The process and device variability exhibited by such materials, however, can present substantial challeng
Externí odkaz:
https://doaj.org/article/d241e365557f4c71a5d786d78854b2e7
Autor:
Benjamin Iniguez, Tor A Fjeldly
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the
Autor:
Benjamin Iñiguez
Publikováno v:
More-than-Moore Devices and Integration for Semiconductors ISBN: 9783031216091
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1acb60d1e030f3839c0b72123742f73
https://doi.org/10.1007/978-3-031-21610-7_3
https://doi.org/10.1007/978-3-031-21610-7_3
Publikováno v:
Journal of Integrated Circuits and Systems. 16:1-6
In this paper, we report the effects of thermal annealing on Poly(methyl methacrylate) (PMMA) passivated, bottom gate thin film transistors, with amorphous hafnium oxide (HfO2) as gate dielectric and amorphous hafnium-indium-zinc oxide (a-HIZO) as se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7086b9da73be3e06041b5905ea77d303
https://doi.org/10.29292/jics.v16i3.561
https://doi.org/10.29292/jics.v16i3.561
Autor:
Aristeidis Nikolaou, Jakob Leise, Ute Zschieschang, Hagen Klauk, Thomas Gneiting, Ghader Darbandy, Benjamin Iñiguez, Alexander Kloes
Publikováno v:
Organic Electronics. 120:106846
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0171027a71df1f027c1fd46715b5b0d6
https://doi.org/10.1016/j.orgel.2023.106846
https://doi.org/10.1016/j.orgel.2023.106846
Autor:
Ghader Darbandy, Elahe Rastegar Pashaki, Christian Roemer, Amric Bonil, Juan Wang, Benjamin Iniguez, Hans Kleemann, Alexander Kloes
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In state‐of‐the‐art organic transistors, the transit frequency fT is reported to be fT = 40 MHz for vertical organic transistors, where a voltage‐normalized fT corresponds to 0.36 MHz V−2. The reported highest fT for conventional o
Externí odkaz:
https://doaj.org/article/54523743cb2c49058cd59d3382e4f246
Autor:
Alexander Kloes, Jakob Leise, Jakob Pruefer, Aristeidis Nikolaou, Benjamin Iniguez, Thomas Gneiting, Hagen Klauk, Ghader Darbandy
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 734-743 (2023)
This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to the potential barrier in the channel region, which manifest themselves a
Externí odkaz:
https://doaj.org/article/73e8e5fdd25f469fbb1a443d6d063d44
Autor:
Malte Koch, Hsin Tseng, Anton Weissbach, Benjamin Iniguez, Karl Leo, Alexander Kloes, Hans Kleemann, Ghader Darbandy
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 665-671 (2023)
In this work, we investigate organic electrochemical transistors (OECTs) as a novel artificial electronic device for the realization of synaptic behavior, bioelectronics, and a variety of applications. A numerical method considering the Poisson-Boltz
Externí odkaz:
https://doaj.org/article/2035bca101db4847954b643c9314f4b2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 631-633 (2023)
This Special Issue is devoted to research and development in the field of electron devices science and technology. We have selected a number of high-quality papers presented at the 4th Latin American Electron Device Conference (LAEDC 2022). The forth
Externí odkaz:
https://doaj.org/article/24e49012809a4cf8807115b55b430ba2
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 23:447-457
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18a88de36609ff8f65119f5b72de4d46
https://doi.org/10.1002/jnm.745
https://doi.org/10.1002/jnm.745