Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Benjamin Huet"'
Autor:
Gwangwoo Kim, Benjamin Huet, Christopher E. Stevens, Kiyoung Jo, Jeng-Yuan Tsai, Saiphaneendra Bachu, Meghan Leger, Seunguk Song, Mahfujur Rahaman, Kyung Yeol Ma, Nicholas R. Glavin, Hyeon Suk Shin, Nasim Alem, Qimin Yan, Joshua R. Hendrickson, Joan M. Redwing, Deep Jariwala
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensi
Externí odkaz:
https://doaj.org/article/c540337d48bb4830a415a154efef4bd9
Publikováno v:
ACS Omega, Vol 6, Iss 31, Pp 20598-20610 (2021)
Externí odkaz:
https://doaj.org/article/b427b990be1f4e8a9f04efb519b00831
Publikováno v:
Carbon. 202:150-160
Autor:
Marianne Sophie Hollinetz, Benjamin Huet, David A. Schneider, Christopher R. M. McFarlane, Gerd Rantitsch, Bernhard Grasemann
Precise thermobarometric and geochronologic data are crucial to correctly interpret the timing of metamorphism and identify complex polymetamorphic histories. We present new P-T-t-D data from samples collected in two Austroalpine nappes exposed in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b4046de0be3062eea9a70208d10de22
https://doi.org/10.5194/egusphere-egu23-11972
https://doi.org/10.5194/egusphere-egu23-11972
Autor:
Saiphaneendra Bachu, Steffi Y Woo, Benjamin Huet, Nicholas Trainor, Danielle Reifsnyder Hickey, Joan M Redwing, Mathieu Kociak, Luiz HG Tizei, Nasim Alem
Publikováno v:
Microscopy and Microanalysis. 28:1954-1956
Publikováno v:
2D Materials for Electronics, Sensors and Devices ISBN: 9780128215050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c14453e6610b921f2e615c7fafda7b93
https://doi.org/10.1016/b978-0-12-821505-0.00003-4
https://doi.org/10.1016/b978-0-12-821505-0.00003-4
Autor:
Pallavi Aggarwal, Anushka Bansal, Tanushree H. Choudhury, Tejendra K Gupta, Weida Hu, Benjamin Huet, Deep Jariwala, Jie Jiang, Baisali Kundu, Saurabh Lodha, Jinshui Miao, Himanshu Mishra, Prachi Mohanty, Suyash Rai, Joan M. Redwing, Prasana Kumar Sahoo, Madan Sharma, Aditya Singh, Rajendra Singh, Vijay K Singh, Sahin Sorifi, Anchal Srivastava, Jingya Su, Kartikey Thakar, Zhen Wang, Xiaotian Zhang
Publikováno v:
2D Materials for Electronics, Sensors and Devices ISBN: 9780128215050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d688d29be984a6d85bc7e888a8486fb
https://doi.org/10.1016/b978-0-12-821505-0.00099-x
https://doi.org/10.1016/b978-0-12-821505-0.00099-x
Autor:
Ke Wang, Azimkhan Kozhakhmetov, Maria Hilse, Anushka Bansal, Ji Hyun Kim, Roman Engel-Herbert, Saiphaneendra Bachu, Nasim Alem, Joshua A. Robinson, Benjamin Huet, Ramon Collazo, Joan M. Redwing
Publikováno v:
ACS Applied Materials & Interfaces. 13:54516-54526
A comparison of hexagonal boron nitride (hBN) layers grown by chemical vapor deposition on C-plane (0001) versus A-plane (1120) sapphire (α-Al2O3) substrate is reported. The high deposition temperature (>1200 °C) and hydrogen ambient used for hBN d
Autor:
Haoyue Zhu, Nadire nayir, Tanushree Choudhury, Anushka Bansal, Benjamin Huet, Kunyan Zhang, Alexander Puretzky, Saiphaneendra Bachu, Krystal York, Thomas Mc Knight, Nicholas Trainor, Ke Wang, Robert Makin, Steven Durbin, Shengxi Huang, Nasim Alem, Vincent Crespi, Adri Van Duin, Joan Redwing
Epitaxial growth of 2D transition metal dichalcogenides (TMDs) on sapphire has emerged as a promising route to wafer-scale single crystal films. Steps on the sapphire act as sites for TMD nucleation and can impart a preferred domain orientation resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f53dd40bc2b216c741506ad15bc5c41
https://doi.org/10.21203/rs.3.rs-2180223/v1
https://doi.org/10.21203/rs.3.rs-2180223/v1