Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Benjamin Gesemann"'
Autor:
Svetoslav Koynov, Stefan Kontermann, Thomas Gimpel, Ralf B. Wehrspohn, Xiaopeng Li, Johannes Ziegler, Howard M. Branz, Kevin Füchsel, Benjamin Gesemann, Michael Algasinger, Matthias Zilk, Jihun Oh, Alexander Sprafke, Thomas Käsebier, Martin Otto, Volker Naumann
Publikováno v:
Photon Management in Solar Cells
This article presents an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties. To perform this quantitative comparison, different groups working on black
Autor:
Daniel Pergande, Benjamin Gesemann, Stefan L. Schweizer, Torsten M. Geppert, Ralf B. Wehrspohn, Susanne Moretton, Armin Lambrecht
Publikováno v:
Comptes Rendus Chimie. 16:51-58
Periodic silicon nanostructures can be used for different kinds of gas sensors depending on the analyte concentration. First, we present an optical gas sensor based on the classical non-dispersive infrared technique for ppm-concentration using ultra-
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications. 8:107-111
We present measurements of the thermal emission properties of 2D and 3D silicon photonic crystals with and without substrate heated resistively as well as passively with an aluminium hotplate. The out-of-plane and in-plane emission properties were re
Autor:
Jihun Oh, Volker Naumann, Xiaopeng Li, Thomas Gimpel, Matthias Zilk, Ralf B. Wehrspohn, Howard M. Branz, Martin Otto, Michael Algasinger, Svetoslav Koynov, Benjamin Gesemann, Kevin Füchsel, Johannes Ziegler, Thomas Käsebier, Alexander Sprafke, Stefan Kontermann
This article presents an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties. To perform this quantitative comparison, different groups working on black
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1ef3ff9c22e93dfe79704edb4a709af
https://publica.fraunhofer.de/handle/publica/239395
https://publica.fraunhofer.de/handle/publica/239395
Autor:
Alexander Sprafke, Kevin Füchsel, Johannes Ziegler, Xiaopeng Li, Thomas Käsebier, Martin Otto, Ralf B. Wehrspohn, Benjamin Gesemann, Matthias Kroll
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Optical properties of black silicon (b-Si) can be tailored to minimize reflection losses to less than 0.6 % between 300-1000 nm and to improve the absorption at the silicon band-edge by light-trapping. Recently, metal assisted wet-chemically etched (
Autor:
Martin Otto, Matthias Kroll, Thomas Käsebier, Benjamin Gesemann, Ralf B. Wehrspohn, Johannes Ziegler, Kevin Füchsel, Xiaopeng Li, Alexander Sprafke
Publikováno v:
Renewable Energy and the Environment.
Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by t
Autor:
Ralf B. Wehrspohn, Torsten M. Geppert, Armin Lambrecht, Stefan L. Schweizer, Daniel Pergande, Susanne Moretton, Benjamin Gesemann
Publikováno v:
SPIE Proceedings.
Periodic silicon nanostructures can be used for different kinds of gas sensors depending on the analyte concentration. First we present an optical gas sensor based on the classical non-dispersive infrared technique for ppm-concentration using ultra-c
The 9/11 events have led to an increase in the request for sensors and sensor systems that can detect rapidly, efficiently, and at moderate cost trace explosives and a whole range of toxic substances at diverse control points, e.g., at airports and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6a2b8ae09d4b67c0635dc5d0ad91fde
https://publica.fraunhofer.de/handle/publica/225080
https://publica.fraunhofer.de/handle/publica/225080
Publikováno v:
SPIE Proceedings.
We present measurements of the thermal emission properties of 2D and 3D silicon photonic crystals using either localized integrated emission sources or resistively heating the entire photonic crystals with and without substrate. The in-plane as well
Publikováno v:
ECS Meeting Abstracts. :2427-2427
not Available.