Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Benjamin George Eynon"'
Publikováno v:
22nd European Mask and Lithography Conference.
The progressive mask defect problem is an industry-wide mask reliability issue. Even if masks are determined to be clean upon arrival from the mask supplier, some of these masks can show catastrophic defect growth over the course of production usage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29cabdb4c246a302c1084ae40db0dc94
https://doi.org/10.1117/12.692642
https://doi.org/10.1117/12.692642
Autor:
Benjamin George Eynon, Carmen Jaehnert, Doris Uhlig, D. Gudmundsson, Kong Son, Kaustuve Bhattacharyya
Publikováno v:
SPIE Proceedings.
Progressive mask defect problems such as crystal growth or haze are key yield limiters for DUV lithography, especially in 300mm fabs. Even if the incoming mask quality is good, there is no guarantee that the mask will remain clean during its producti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e0527d8ad060467f8a5e724950971e
https://doi.org/10.1117/12.568874
https://doi.org/10.1117/12.568874
Autor:
Renee D. Mallen, Bryan S. Kasprowicz, Benjamin George Eynon, John P. Snyder, Bruce Wheeler, Donna Yost, H. Liu, Michael Fritze
Publikováno v:
SPIE Proceedings.
Advanced transistor research requires the patterning of isolated gate feature sizes well below available illumination wavelengths. In this work, we explore the limits of imaging isolated line features using double exposure strong phase shift methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bebe1c231e94dbbcfa68a3c0997a0f8
https://doi.org/10.1117/12.485332
https://doi.org/10.1117/12.485332
Autor:
Rick S. Farnbach, Darren Taylor, Patrick M. Martin, John V. Jensen, Henry Kamberian, Benjamin George Eynon, George E. Bailey, Kunal N. Taravade, Neal P. Callan
Publikováno v:
SPIE Proceedings.
Dark field (i.e. hole and trench layer) lithographic capability is lagging that of bright field. The most common dark field solution utilizes a biased-up, standard 6% attenuated phase shift mask (PSM) with an under-exposure technique to eliminate sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::564a4720f60d01175f3c595759871832
https://doi.org/10.1117/12.485518
https://doi.org/10.1117/12.485518
Publikováno v:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents.
The future of mask industry technology is in flux. While the requirements for current and near-term lithographic capability is well understood, advanced lithography options pose a completely new set of challenges to the mask maker. Challenges are not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5945bda4d8079384b54296764d52fc0
https://doi.org/10.1117/12.514946
https://doi.org/10.1117/12.514946
Autor:
James V. Beach, John S. Petersen, Benjamin George Eynon, Dave J. Gerold, Mark John Maslow, Darren Taylor
Publikováno v:
SPIE Proceedings.
This study explores the capability of printing 100 nm contacts through the use of 9% and 15% attenuated phase shift masks and a 0.75 NA 193 nm scanner. The mask designs targeted simultaneous solutions for 100 nm contacts at pitches from 200 nm to 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69f82bff1cb966a8284ab5f5ff19017
https://doi.org/10.1117/12.467763
https://doi.org/10.1117/12.467763
Autor:
Bernd Brendel, Ute Buttgereit, Chris Constantine, Ludger U. Schneider-Stoermann, Mathias Irmscher, Dietmar Mueller, Kevin Cummings, Benjamin George Eynon, John M. Whittey, Kirk Miller, Jason Harsch, Peter Hudek, Dirk Beyer
Publikováno v:
SPIE Proceedings.
This work involved a demonstration of the infrastructure and the ability of mask-making equipment to produce 9 inch reticles. While the choices for this particular work made the timing and logistics long and complicated, we find that there currently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbe64e10ec3ef1b4e119b9dc5557a467
https://doi.org/10.1117/12.467495
https://doi.org/10.1117/12.467495
Publikováno v:
SPIE Proceedings.
There are several different methods for printing contact holes on wafers using optical lithography. A preferred resolution enhancement technique for improved contact hole lithography performance is the embedded attenuated phase shift mask (EAPSM). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3b8ce1f3d0fde325fc6c346a9e3bcd1
https://doi.org/10.1117/12.476969
https://doi.org/10.1117/12.476969
Publikováno v:
SPIE Proceedings.
The Chromeless Phase Shift Mask (CLM) approach from ASML MaskTools has been developed as an approach to achieve sub-100nm lithography using currently available stepper technology. The technology uses sub-resolution gray-scaled regions of zero-phase a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a92829a97e4c3e6274d2ceeaf4ad47d2
https://doi.org/10.1117/12.474513
https://doi.org/10.1117/12.474513
Publikováno v:
SPIE Proceedings.
This paper examines the effects of mask printability of various OPC defect types on a MoSi APSM mask using an MSM-100 AIMS tool operating at 248nm as a printability prediction tool. Printability analysis will be used to address differences in intensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e72f14c9ef071684e6c21813301dacbd
https://doi.org/10.1117/12.438407
https://doi.org/10.1117/12.438407