Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Benjamin G. Crutchley"'
Publikováno v:
physica status solidi c. 10:1533-1536
A temperature dependent investigation into the efficiency droop effect in blue and green InGaN light-emitting diodes (LEDs) is presented. The efficiency droop effect is observed to be the strongest at low temperatures in both blue and green LEDs. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d5503c2e274004e62b13441599e000c
https://doi.org/10.1002/pssc.201300360
https://doi.org/10.1002/pssc.201300360
Autor:
A. D. Prins, S. Kynaston, Benjamin G. Crutchley, Daren Alfred Lock, Stephen J. Sweeney, Simon R. G. Hall
Publikováno v:
Journal of Display Technology. 9:396-401
LED-based lamps that are currently on the market are expensive due to the complex packaging required to dissipate the heat generated. This also limits their performance and lifetime due to the degradation of the phosphor or individual LED chips, in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ebd0a82f3d560c26d327de701752613
https://doi.org/10.1109/jdt.2013.2251607
https://doi.org/10.1109/jdt.2013.2251607
Autor:
U. Monteverde, Geoffrey Tse, Max A. Migliorato, Stephen J. Sweeney, H. Y. S. Al-Zahrani, J. Pal, Yuh-Renn Wu, Chi-Kang Li, Igor P. Marko, Benjamin G. Crutchley, R. Garg, Stanko Tomić
Publikováno v:
AIP Conference Proceedings.
The piezoelectric effect in polar semiconductor has seen increased interest in recent years because of the prospect of exploiting semiconducting behavior and piezoelectric response, i.e. generating electric fields in response to pressure, in novel op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341cad868375234409b84465a6b50e9b
https://doi.org/10.1063/1.4870192
https://doi.org/10.1063/1.4870192
Publikováno v:
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC.
In this study low temperature and high pressure techniques have been used to investigate the recombination processes taking place in InGaN-based quantum well light emitting diodes (LEDs) which have emission across the blue-green region. Despite relat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::941f5b0cb170f5d98af1104461d3c39c
https://doi.org/10.1109/cleoe-iqec.2013.6801007
https://doi.org/10.1109/cleoe-iqec.2013.6801007
Publikováno v:
Crutchley, BG, Marko, IP, Pal, J, Migliorato, MA & Sweeney, SJ 2013, ' Optical properties of InGaN�based LEDs investigated using high hydrostatic pressure dependent techniques ' Physica Status Solidi (B) .
High pressure electroluminescence (EL) measurements were carried out on blue and green emitting InGaN-based light emitting diodes (LEDs). The weak pressure coefficient of the peak emission energy of the LEDs is found to increase with increasing injec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c3a8762636ffe26b036569652ba2682
https://pure.manchester.ac.uk/ws/files/28866647/POST-PEER-REVIEW-NON-PUBLISHERS.DOCX
https://pure.manchester.ac.uk/ws/files/28866647/POST-PEER-REVIEW-NON-PUBLISHERS.DOCX
Publikováno v:
22nd IEEE International Semiconductor Laser Conference.
The efficiency of InGaN/GaN blue-green emitters is experimentally investigated. The results provide initial evidence for an inter conduction-band Auger resonance, increasing droop in InGaN LEDs and causing the low radiative efficiency of green laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75345c615c40153102bd102bd89c9162
https://doi.org/10.1109/islc.2010.5642770
https://doi.org/10.1109/islc.2010.5642770
Autor:
Max A. Migliorato, Benjamin G. Crutchley, Igor P. Marko, Chi-Kang Li, J. Pal, Yuh-Renn Wu, Stephen J. Sweeney
Publikováno v:
Pal, J, Migliorato, M A, Li, C K, Wu, Y R, Crutchley, B G, Marko, I P & Sweeney, S J 2013, ' Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management ', Journal of Applied Physics, vol. 114, no. 7, 073104 . https://doi.org/10.1063/1.4818794
We report calculations of the strain dependence of the piezoelectric field within InGaN multi-quantum wells light emitting diodes. Such fields are well known to be a strong limiting factor of the device performance. By taking into account the nonline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e33fb6e252dc9c0b5671807e89bc1ed3
https://doi.org/10.1063/1.4818794
https://doi.org/10.1063/1.4818794