Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

Autor: Dago M. de Leeuw, Henrique L. Gomes, Stefan C. J. Meskers, Paulo R. F. Rocha, Benjamin F. Bory

Publikováno v: Journal of Applied Physics, 118:205503, 1-11. American Institute of Physics
Bory, B F, Rocha, P R F, Gomes, H L, De Leeuw, D M & Meskers, S C J 2015, ' Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon ', Journal of Applied Physics, vol. 118, no. 20, 205503 . https://doi.org/10.1063/1.4936349
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
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Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70d68e761031a5a1ee0ab33289264d9c
https://doi.org/10.1063/1.4936349

Electrical conduction of LiF interlayers in organic diodes

Autor: René A. J. Janssen, Benjamin F. Bory, Stefan C. J. Meskers, Dago M. de Leeuw, Henrique L. Gomes

Publikováno v: Journal of Applied Physics, 117(15), 155502-1/8. American Institute of Physics
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An interlayer of LiF in between a metal and an organic semiconductor is commonly used to improve the electron injection. Here, we investigate the effect of moderate bias voltages on the electrical properties of Al/LiF/poly(spirofluorene)/Ba/Al diodes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::999a9f0c997ff67c4c965083e4a2165f
https://hdl.handle.net/10400.1/11123

Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

Autor: Stefan C. J. Meskers, René A. J. Janssen, Henrique L. Gomes, Paulo R. F. Rocha, Dago M. de Leeuw, Benjamin F. Bory

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
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Applied Physics Letters, 105(12):123302, 123302-1/4. American Institute of Physics
Bory, B F, Rocha, P R F, Janssen, R A J, Gomes, H L, De Leeuw, D M & Meskers, S C J 2014, ' Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons ', Applied Physics Letters, vol. 105, no. 12, 123302 . https://doi.org/10.1063/1.4896636

Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f851294d02e49f9ea96101779cf670d
https://hdl.handle.net/10400.1/6635

Nanosession: Molecular and Polymer Electronics

Autor: Nicolae Atodiresei, Vasile Caciuc, Predrag Lazic, Stefan Blügel, Stefan C. J. Meskers, Benjamin F. Bory, Henrique L. Gomes, René A. J. Janssen, Dago M. de Leeuw, N. Babajani, C. Kaulen, M. Homberger, U. Simon, R. Waser, S. Karthäuser, Martin Callsen, Philip Schulz, Tobias Schäfer, Christopher Zangmeister, Dominik Meyer, Christian Effertz, Riccardo Mazzarello, Roger Van Zee, Matthias Wuttig

Publikováno v: Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cab823b10bf71046edf615b793794ede
https://doi.org/10.1002/9783527667703.ch64

Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming

Autor: Dago M. de Leeuw, René A. J. Janssen, Benjamin F. Bory, Stefan C. J. Meskers, Henrique L. Gomes

Publikováno v: Applied Physics Letters, 97(22):222106, 222106-1/3. American Institute of Physics
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Submitted by Henrique Leonel Gomes (hgomes@ualg.pt) on 2014-01-02T18:50:11Z No. of bitstreams: 1 2010 Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming APL.pdf: 162760 bytes, checksum: 19b3f936751d7fd13

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a0014ac80a6e7d499d14bc39e7c60e0
https://doi.org/10.1063/1.3520517