Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Benjamin D. Naab"'
Autor:
Conner Hoelzel, Li Cui, Benjamin D. Naab, Jong Keun Park, Philjae Kang, Kenneth Hernandez, Suzanne M. Coley, Stefan Alexandrescu, Rochelle Rena, James F. Cameron, Emad Aqad
Publikováno v:
Advances in Patterning Materials and Processes XL.
Autor:
Yinjie Cen, ChoongBong Lee, Li Cui, Suzanne M. Coley, Jong Keun Park, Benjamin D. Naab-Rafael, Emad Aqad, Rochelle Rena, Tyler Paul, Thomas Penniman, Jason Behnke, Julia T. Early, Benjamin Foltz
Publikováno v:
Advances in Patterning Materials and Processes XL.
Autor:
Koen Vandewal, Karl Sebastian Schellhammer, Nobuo Ueno, Andreas Hofacker, Satoshi Kera, Karl Leo, Fabio Bussolotti, Martin Schwarze, Johannes Widmer, Christopher Gaul, Donato Spoltore, Reinhard Scholz, Benjamin D. Naab, Zhenan Bao, Frank Ortmann, Bernhard Nell
Publikováno v:
Nature materials. 18(3)
We thank O. Kaveh and D. Schutze for performing conductivity measurements, D. Wohrle for supplying F 8 ZnPc, and M.L. Tietze for insightful discussions. M.S. acknowledges financial support by the German Research Foundation (DFG) through the project M
Autor:
Satoshi Kera, Max L. Tietze, Paul Pahner, Reinhard Scholz, Karl Leo, Daniel Kasemann, Fabio Bussolotti, Martin Schwarze, Zhenan Bao, Benjamin D. Naab
Publikováno v:
ACS applied materialsinterfaces. 10(1)
Efficient n-doping of organic semiconductors requires electron-donating molecules with small ionization energies, making such n-dopants usually sensitive to degradation under air exposure. A workaround consists in the usage of air-stable precursor mo
Autor:
Benjamin D. Naab, Seth R. Marder, Siyuan Zhang, Zhenan Bao, Alberto Salleo, Koen Vandewal, Stephen Barlow
Publikováno v:
Advanced Materials. 26:4268-4272
Autor:
Yaoxuan Li, Yongli Gao, Eric Adijanto, Satoshi Morishita, Benjamin C. K. Tee, Jeff Han, Peng Wei, Zhenan Bao, Benjamin D. Naab, Hye Ryoung Lee, Huiliang Wang, Nan Liu, Yi Cui, Chenggong Wang, Qiaochu Li
Publikováno v:
Proceedings of the National Academy of Sciences. 111:4776-4781
Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of sin
Autor:
Antoine Kahn, Seth R. Marder, Eric G.B. Evans, Stephen Barlow, Song Guo, Benjamin D. Naab, Peng Wei, Selina Olthof, Zhenan Bao, Glenn L. Millhauser
Publikováno v:
Journal of the American Chemical Society. 135:15018-15025
The discovery of air-stable n-dopants for organic semiconductor materials has been hindered by the necessity of high-energy HOMOs and the air sensitivity of compounds that satisfy this requirement. One strategy for circumventing this problem is to ut
Autor:
Alberto Salleo, Koen Vandewal, Scott Himmelberger, Zhenan Bao, Björn Lüssem, Ying Diao, Peng Wei, Benjamin D. Naab
Publikováno v:
Advanced Materials. 25:4663-4667
An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are ob
Publikováno v:
ACS Nano. 7:3970-3980
Biodetection using organic field-effect transistors (OFETs) is gaining increasing interest for applications as diverse as food security, environmental monitoring, and medical diagnostics. However, there still lacks a comprehensive, empirical study on
Autor:
Benjamin D. Naab, Wei Chen, Eric Adijanto, Nan Liu, Hye Ryoung Lee, Zhenan Bao, Peng Wei, Yi Cui, Lijie Ci, Jin-Seong Park, Jian-Qiang Zhong
Publikováno v:
Nano Letters. 13:1890-1897
Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) gr