Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Benjamin D. Briggs"'
Autor:
Balasubramanian S. Pranatharthi Haran, B. Peethala, Kedari Matam, Kisik Choi, Nicholas A. Lanzillo, J. Casey, L. Chang, Terry A. Spooner, D. Janes, David L. Rath, Benjamin D. Briggs, Donald F. Canaperi, M. Packiam, Devika Sil, Hosadurga Shobha, Ryan Kevin J
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The Fully aligned via scheme (FAV) is known to mitigate the via misalignment issues that drive a lower Vmax and limits the contact area between the via and the underlying line. Even though the overall benefits of FAV are well known, the key detractor
Autor:
Benjamin D. Briggs, Robert R. Robison, Nicholas A. Lanzillo, Theo Standaert, Christian Lavoie
Publikováno v:
Computational Materials Science. 158:398-405
The vertical resistance of Cu/Ta/Ru/Cu stacks is calculated using a combination of first-principles density functional theory (DFT) and a Non-Equilibrium Green’s Function (NEGF) formalism. The effects of oxidizing either one or both of the Ta and R
Autor:
Paul S. McLaughlin, Thomas J. Haigh, Devika Sil, Huai Huang, Nicholas A. Lanzillo, Raghuveer R. Patlolla, Pranita Kerber, Hosadurga Shobha, James Chingwei Li, C. B. Pcethala, Yongan Xu, Donald F. Canaperi, James J. Demarest, Elbert E. Huang, Chanro Park, Clevenger Leigh Anne H, Benjamin D. Briggs, Licausi Nicholas, Jae Gon Lee, M. Ali, Son Nguyen, Young-Wug Kim, Theodorus E. Standaert, C. T. Le, G. Lian, Griselda Bonilla, Errol Todd Ryan, Han You, David L. Rath
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
As BEOL pitch continues to aggressively scale, contributions from pattern dimension and edge placement constrict the available geometry of interconnects. In particular, the critical minimum insulator spacing which defines a technologies max operating
Defect detection strategies and process partitioning for SE EUV patterning (Conference Presentation)
Autor:
Nelson Felix, Barry Saville, Corey Lemley, Bassem Hamieh, Christopher F. Robinson, Shinichiro Kawakami, Jeffrey C. Shearer, Chet Lenox, Yann Mignot, Takeshi Shimoaoki, Eric Liu, Hiroshi Ichinomiya, Koichiro Tanaka, Ankit Jain, Koichi Hontake, Shravan Matham, Heungsoo Choi, John C. Arnold, Luciana Meli, Anuja De Silva, Benjamin D. Briggs, Ko Akiteru, Hashimoto Yusaku, Lior Huli, Akiko Kai, Dave Hetzer, Karen Petrillo
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e
Autor:
Yongan Xu, Peethala Cornelius Brown, Hosadurga Shobha, Chanro Park, Huai Huang, Devika Sil, Pranita Kerber, Raghuveer R. Patlolla, David L. Rath, Clevenger Leigh Anne H, M. Ali, James Chingwei Li, Jae Gon Lee, Paul S. McLaughlin, Benjamin D. Briggs, Thomas J. Haigh, C. T. Le, G. Lian, Theodorus E. Standaert, Son Nguyen, Nicholas A. Lanzillo, Licausi Nicholas, Donald F. Canaperi, Elbert E. Huang, Errol Todd Ryan, Han You, Griselda Bonilla, James J. Demarest, Young-Wug Kim
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
A fully aligned via (FAV) integration scheme is introduced and demonstrated at 36 nm metal pitch, with extendibility to beyond the 7 nm node. Selective chemistries were developed to recess Cu and W wires and their associated barrier liner materials,
Autor:
X. Zhang, J. Maniscalco, James Chingwei Li, B. Peethala, Son Nguyen, Han You, Nicholas A. Lanzillo, G. Lian, Vamsi Paruchuri, Takeshi Nogami, Hosadurga Shobha, X. Lin, Scott DeVries, Benjamin D. Briggs, Terry A. Spooner, Raghuveer R. Patlolla, Terence Kane, Daniel C. Edelstein, Huai Huang, James J. Kelly, Theodorus E. Standaert, C.-C. Yang, Jae Gon Lee, Motoyama Koichi, Prasad Bhosale, Donald F. Canaperi, S. Lian, P. McLaughlin, James J. Demarest, Devika Sil, Alfred Grill
Publikováno v:
2017 Symposium on VLSI Technology.
For beyond 7 nm node BEOL, line resistance (R) is assessed among four metallization schemes: Ru; Co; Cu with TaN/Ru barrier, and Cu with through-cobalt self-forming barrier (tCoSFB) [1]. Line-R vs. linewidth of Cu fine wires with TaN/Ru barrier cross
Autor:
J. Maniscalco, James J. Kelly, Huai Huang, James Chingwei Li, Hosadurga Shobha, G. Lian, R. Hengstebeck, P. McLaughlin, Prasad Bhosale, Raghuveer R. Patlolla, Theodorus E. Standaert, James J. Demarest, Takeshi Nogami, Daniel C. Edelstein, B. Peethala, Donald F. Canaperi, Benjamin D. Briggs, Son Nguyen, X. Zhang, Vamsi Paruchuri
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
Co/Cu composite interconnect systems were studied. Since wide Cu lines require a diffusion barrier which is simultaneously applied also to fine Co lines to reduce Co volume fraction, through-Cobalt Self-Formed-Barrier (tCoSFB) was employed to thin do
Publikováno v:
Journal of Materials Research. 27:3110-3116
Resistive memory devices have the potential to replace flash technology due to their increased scalability, low voltage of operation, and compatibility with silicon semiconductor manufacturing. We report a spin-on resistive switching material, hydrog
Autor:
Vamsi Paruchuri, Juntao Li, Takeshi Nogami, Daniel C. Edelstein, Terry A. Spooner, Stephan A. Cohen, Theodorus E. Standaert, Moosung M. Chae, James J. Kelly, Terence Kane, Donald F. Canaperi, Elbert E. Huang, Benjamin D. Briggs, Raghuveer R. Patlolla, Deepika Priyadarshini, Sevim Korkmaz, Paul S. McLaughlin, Christopher Parks, Christopher J. Penny, Anita Madan, Xunyuan Zhang, Hosadurga Shobha, Wei Wang, Son Nguyen, Thomas M. Shaw
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMn O barrier, with integrity proven b
Publikováno v:
IEEE Transactions on Nanotechnology. 10:710-714
In this paper, we investigate key reliability limiting factors of bilayer graphene (BLG)/copper hybrid interconnect system by examining its current-induced breakdown behavior and BLG/Cu contact. The results show that BLG displays an impressive curren