Výsledky vyhledávání - "Benjamin Chu-Kung"

300mm Heterogeneous 3D Integration of Record Performance Layer Transfer Germanium PMOS with Silicon NMOS for Low Power High Performance Logic Applications

Publikováno v: 2019 IEEE International Electron Devices Meeting (IEDM).

We report a short channel high performance Ge PMOS integrated with Si NMOS in sequential monolithic 3D stacking. A layer transfer Ge PMOS with record I ON = 497 μA/μm at I OFF = 8nA/μm and I ON = 630 μA/μm at I OFF = 100nA/μm and V DS = -0.5V i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75e7b3524af2d1b2c9ac22c6739970bb
https://doi.org/10.1109/iedm19573.2019.8993626

Zobrazit plný text záznamu

Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET

Autor: Jack T. Kavalieros, Uygar E. Avci, Daniel H. Morris, Sayed Hasan, Rafael Rios, Gilbert Dewey, Ashish Agrawal, Le Van H, Roza Kotlyar, Benjamin Chu-Kung, Ian A. Young

Publikováno v: 2015 IEEE International Electron Devices Meeting (IEDM).

Tunneling Field Effect Transistor (TFET) has attracted interest due to its steep-SS prospects [1]. Although a number of sub-60mV/dec TFETs were demonstrated [2], many failed to realize this feat due to non-optimized geometry, material choice [3], and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a87ac3f3ca3560e9d81d9ed4132e145c
https://doi.org/10.1109/iedm.2015.7409828

Zobrazit plný text záznamu

Experimental observation and physics of 'negative' capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate

Autor: Matthew V. Metz, Jack Portland Kavalieros, Valluri R. Rao, M. Oliver, Loren Chow, R. Chau, R. Pillarisetty, X. Gao, Benjamin Chu-Kung, Niloy Mukherjee, G. Dewey, G. Yang, Sanaz K. Gardner, Seung Hoon Sung, Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic

Publikováno v: 2013 IEEE International Electron Devices Meeting.

GaN is a promising material for LED lighting [1], high voltage power electronics [2] and high power RF applications [3]. GaN HEMT and MOS-HEMT with AlGaN [4] or AlInN [5] polarization layer have been widely studied. In this work we investigate the ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b776d0cfd92c8308a1b00a120288afa6
https://doi.org/10.1109/iedm.2013.6724709

Zobrazit plný text záznamu

MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

Autor: G. Dewey, Peter G. Tolchinsky, J. M. Fastenau, Matthew V. Metz, A. Eisenbach, Marko Radosavljevic, T. Stewart, W. K. Liu, Jack Portland Kavalieros, Benjamin Chu-Kung, R. Chau, D. Lubyshev, Niloy Mukherjee, J. Boardman, K. Millard, Han Wui Then

Publikováno v: 2011 International Electron Devices Meeting.

This research work demonstrates, for the first time, that the material quality of MOVPE III–V QWFET structures on Si can be matched to that of the best MBE III–V QWFET structures on Si. The MOVPE grown In 0.53 Ga 0.47 As QW layer on Si exhibits h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a891fa0b1012418d1cca9c91ec2fc0b1
https://doi.org/10.1109/iedm.2011.6131675

Zobrazit plný text záznamu

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

Publikováno v: 2011 International Electron Devices Meeting.

In this work, 3-D Tri-gate and ultra-thin body planar InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and scaled gate-to-source/gate-to-drain (L SIDE ) have been fabricated and compared. For the first time, 3-D Tri-g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32bdc6d1de06cd81e40356570b6b746d
https://doi.org/10.1109/iedm.2011.6131661

Zobrazit plný text záznamu

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

Autor: Han Wui Then, Roza Kotlyar, J. Boardman, W. K. Liu, Matthew V. Metz, Jack Portland Kavalieros, Benjamin Chu-Kung, P. Oakey, G. Dewey, Ravi Pillarisetty, J. M. Fastenau, Niloy Mukherjee, R. Chau, D. Lubyshev, Marko Radosavljevic

Publikováno v: 2011 International Electron Devices Meeting.

This work demonstrates the steepest subthreshold swing (SS < 60mV/decade) ever reported in a III–V Tunneling Field Effect Transistor (TFET) by using thin gate oxide, heterojunction engineering and high source doping. Owing to a lower source-to-chan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2caa8c299af0604777416aab5123b508
https://doi.org/10.1109/iedm.2011.6131666

Zobrazit plný text záznamu

Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

Autor: Matthew V. Metz, G. Dewey, Roza Kotlyar, L. Pan, Jack Portland Kavalieros, Uday Shah, W. K. Liu, W. Rachmady, R. Pillarisetty, Niloy Mukherjee, D. Lubyshev, Robert S. Chau, Benjamin Chu-Kung, K. Millard, J. M. Fastenau, Marko Radosavljevic

Publikováno v: 2010 International Electron Devices Meeting.

In this work, non-planar, multi-gate InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations (L SIDE ) of 5nm are reported for the first time. The high-K gate die

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::43f8829683a26962416613f2ce210b29
https://doi.org/10.1109/iedm.2010.5703306

Zobrazit plný text záznamu

Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

Autor: Robert S. Chau, S. Corcoran, W. Rachmady, Benjamin Chu-Kung, Matthew V. Metz, K. Millard, W. K. Liu, D. Lubyshev, G. Dewey, J. M. Fastenau, Marko Radosavljevic, Mantu K. Hudait, Uday Shah, Niloy Mukherjee, Jack Portland Kavalieros

Publikováno v: 2009 IEEE International Electron Devices Meeting (IEDM).

This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO x -2nm InP) in the In 0.7 Ga 0.3 As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::647d2226b18c0b361e6680e7f6990781
https://doi.org/10.1109/iedm.2009.5424361

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání