Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Benjamin Bruhn"'
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 039102-039102-3 (2019)
Externí odkaz:
https://doaj.org/article/b52e3a3167e04951b86d9b43cba29162
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085313-085313-9 (2018)
The development of new fluorescent molecules and dyes requires precise determination of their emission efficiency, which ultimately defines the potential of the developed materials. For this, the photoluminescence quantum yield (QY) is commonly used,
Externí odkaz:
https://doaj.org/article/a6767d259f904ab89ee62f6a0bc1c7d8
Publikováno v:
ACS Photonics. 5:2990-2996
We demonstrate that nonradiative recombination in semiconductor nanocrystals can be described by a rapid luminescence intermittency, based on carrier tunneling to resonant traps. Such process, we call it “rapid trapping (blinking)”, leads to dela
Autor:
Jan Valenta, Jaroslav Křivánek, Yvo D. Mudde, K. Dohnalová, Ivo Kondapaneni, Gejza Dohnal, Peter Schall, Alex Wilkie, Bart van Dam, Benjamin Bruhn
Publikováno v:
Physical Review Applied, 12(2):024022. American Physical Society
Photoluminescence (PL) quantum yield (QY), which is defined as the ratio of emitted to absorbed photons, is the central quantity that characterizes light-emitting materials. It is an important parameter to assess the light efficiency of new materials
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 039102-039102-3 (2019)
AIP advances, 9(3):039102. American Institute of Physics
AIP advances, 9(3):039102. American Institute of Physics
Autor:
Yashar Hormozan, Benjamin Bruhn, Jan Linnros, Fatemeh Sangghaleh, Ilya Sychugov, Federico Pevere
Publikováno v:
physica status solidi (a). 212:2692-2695
Bulk silicon as an indirect bandgap semiconductor is a poor light emitter. In contrast, silicon nanocrystals (Si NCs) exhibit strong emission even at room temperature, discovered initially at 1990 for porous silicon by Leigh Canham. This can be expla
Publikováno v:
Physica B: Condensed Matter. 453:63-67
Well passivated single Si/SiO2 nanoparticles obey mono-exponential blinking statistics, whereas CdSe/ZnS quantum dots follow an apparent (truncated) power-law. Log-normal distributions are found to describe the interval length histograms at least as
Autor:
Jan Linnros, Ilya Sychugov, Fatemeh Sangghaleh, Benjamin Bruhn, Jun-Wei Luo, Federico Pevere, Alex Zunger
Publikováno v:
Nano letters. 16(12)
We report two orders of magnitude stronger absorption in silicon nanorods relative to bulk in a wide energy range. The local field enhancement and dipole matrix element contributions were disentangled experimentally by single-dot absorption measureme
Autor:
Benjamin J. M. Brenny, Peter Schall, Benjamin Bruhn, Katerina Dohnalova, Ilker Dogan, Sidoeri Dekker
Publikováno v:
Light, Science & Applications
Light: Science & Applications, 6:e17007. Nature Publishing Group
Light: Science & Applications, 6, e17007
Light: Science & Applications, 6:e17007. Nature Publishing Group
Light: Science & Applications, 6, e17007
Silicon nanocrystals (SiNCs) have great potential to become environmental friendly alternatives to heavy-metal containing nanocrystals for applications including medical imaging, lighting and displays. SiNCs exhibit excellent photostability, non-toxi
Publikováno v:
Scientific Reports
Scientific Reports, 6:20538. Nature Publishing Group
Scientific Reports, 6:20538. Nature Publishing Group
Carrier multiplication in nanostructures promises great improvements in a number of widely used technologies, among others photodetectors and solar cells. The decade since its discovery was ridden with fierce discussions about its true existence, mag