Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Benjamin Backes"'
Autor:
Benjamin Backes, Vamsi Devarapalli, Patrick W. DeHaven, Wei-Tsu Tseng, Mahmoud Khojasteh, Elliott Rill, Yiping Yao, Adam Ticknor, Mark Chace, David Steber, Connie Truong, Laertis Economikos, Christopher Majors
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:N3023-N3031
Polyurethane (PU) pad debris is identified as one of the major polish residue defects in Cu CMP processes when a barrier pad is conditioned. AES analysis of the debris confirms the organic nature of such defects while FT-IR analysis reveals the chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::870d95c01c331726db20416abf29598d
https://doi.org/10.1149/2.006401jss
https://doi.org/10.1149/2.006401jss
Publikováno v:
Journal of Electronic Testing. 28:53-62
Finite element modeling (FEM) has been undertaken to characterize the effect of copper (Cu) elasto-plastic behavior on the induction of stress in 3D crystalline silicon (Si) systems incorporating Cu through-silicon vias (TSVs). Using a linear isotrop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959a761ebd702e588bd7d9ce9f4bfbe2
https://doi.org/10.1007/s10836-011-5242-7
https://doi.org/10.1007/s10836-011-5242-7
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
The thermal and spatial variation of Cu TSV-induced stress has been investigated for 1×4 arrays of 5 µm diameter × 50 µm TSVs using microRaman imaging. Following post-CMP annealing the measured Si Raman shift outside the TSV array is slightly mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9177590a0c7e1a0cb886cab520d5e708
https://doi.org/10.1109/iitc.2011.5940275
https://doi.org/10.1109/iitc.2011.5940275
Publikováno v:
2011 International Reliability Physics Symposium.
The thermal and spatial variation of Cu through silicon via (TSV)-induced stress in 300mm Si wafers has been investigated for both isolated TSVs and TSV arrays using top-down and cross-sectional spectral microRaman imaging. The TSV-induced stress in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e255ad46f53d9b76c13c8b4018918d
https://doi.org/10.1109/irps.2011.5784530
https://doi.org/10.1109/irps.2011.5784530
Autor:
Wei-Tsu Tseng, Elliott Rill, Benjamin Backes, Mark Chace, Yiping Yao, DeHaven, Patrick, Ticknor, Adam, Devarapalli, Vamsi, Khojasteh, Mahmoud, Steber, David, Economikos, Laertis, Connie Truong, Majors, Christopher
Publikováno v:
ECS Journal of Solid State Science & Technology; 2014, Vol. 3 Issue 1, pN3023-N3031, 9p