Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Benjamin B. Blalock"'
Publikováno v:
Microelectronics Journal. 65:84-93
This paper presents two efficient numerical models developed for simulating circuits containing silicon-on-insulator four-gate transistors (G4FET). First the model is developed using one set of available data and then it is validated using another se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::551bad8d79efc1c762ddf37804e3ac40
https://doi.org/10.1016/j.mejo.2017.05.011
https://doi.org/10.1016/j.mejo.2017.05.011
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
A novel resonant gate driver designed for the high-frequency enhancement-mode GaN HEMT power devices is proposed in this work. Simulation results indicate that it reduces gate driving loss more than 50% compared to the conventional non-resonant gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a9be4c441c21c8470855891ddb0e17f
https://doi.org/10.1109/apec.2015.7104616
https://doi.org/10.1109/apec.2015.7104616
Autor:
Mojarradi M; NASA Jet Propulsion Laboratory, Pasadena, CA 91109, USA. Mojarradi@jpl.nasa.gov, Binkley D, Blalock B, Andersen R, Ulshoefer N, Johnson T, Del Castillo L
Publikováno v:
IEEE transactions on neural systems and rehabilitation engineering : a publication of the IEEE Engineering in Medicine and Biology Society [IEEE Trans Neural Syst Rehabil Eng] 2003 Mar; Vol. 11 (1), pp. 38-42.