Zobrazeno 1 - 10
of 225
pro vyhledávání: '"Benjamin, Klein"'
Autor:
Mack B. Reynolds, Benjamin Klein, Michael J. McFadden, Norah K. Judge, Hannah E. Navarrete, Britton C Michmerhuizen, Dominik Awad, Tracey L. Schultz, Paul W. Harms, Li Zhang, Teresa R. O’Meara, Jonathan Z. Sexton, Costas A. Lyssiotis, J. Michelle Kahlenberg, Mary X. O’Riordan
Publikováno v:
Cell Reports, Vol 43, Iss 8, Pp 114607- (2024)
Summary: Macrophage metabolic plasticity is central to inflammatory programming, yet mechanisms of coordinating metabolic and inflammatory programs during infection are poorly defined. Here, we show that type I interferon (IFN) temporally guides meta
Externí odkaz:
https://doaj.org/article/b80ebd8315f645efa79adec43f6f9598
Autor:
Shannon N. Loftus, Mehrnaz Gharaee-Kermani, Bin Xu, Tyson M. Moore, Andrew Hannoudi, Mischa J. Mallbris, Benjamin Klein, Johann E. Gudjonsson, J. Michelle Kahlenberg
Publikováno v:
Frontiers in Immunology, Vol 15 (2024)
IntroductionUltraviolet (UV) light is a known trigger of both cutaneous and systemic disease manifestations in lupus patients. Lupus skin has elevated expression of type I interferons (IFNs) that promote increased keratinocyte (KC) death after UV exp
Externí odkaz:
https://doaj.org/article/2688932f602c4078829249e84a14bb01
Autor:
Zhe Chuan Feng, Jiamin Liu, Deng Xie, Manika Tun Nafisa, Chuanwei Zhang, Lingyu Wan, Beibei Jiang, Hao-Hsiung Lin, Zhi-Ren Qiu, Weijie Lu, Benjamin Klein, Ian T. Ferguson, Shiyuan Liu
Publikováno v:
Materials, Vol 17, Iss 12, p 2921 (2024)
GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant mole
Externí odkaz:
https://doaj.org/article/ba9752e518824bcc952da569dc862ff4
Autor:
Ewa Galaj, Briana Hempel, Allamar Moore, Benjamin Klein, Guo-Hua Bi, Eliot L. Gardner, Herbert H. Seltzman, Zheng-Xiong Xi
Publikováno v:
Translational Psychiatry, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Cannabinoid CB1 receptors (CB1Rs) have been major targets in medication development for the treatment of substance use disorders. However, clinical trials with rimonabant, a CB1R antagonist/inverse agonist, failed due to severe side effects.
Externí odkaz:
https://doaj.org/article/77cb5c67ba57479a947e4b25fda32476
Autor:
Yanlian Yang, Yao Liu, Lianshan Wang, Shuping Zhang, Haixia Lu, Yi Peng, Wenwang Wei, Jia Yang, Zhe Chuan Feng, Lingyu Wan, Benjamin Klein, Ian T. Ferguson, Wenhong Sun
Publikováno v:
Materials, Vol 16, Iss 23, p 7442 (2023)
The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the Al
Externí odkaz:
https://doaj.org/article/aa256e7fc1164ea4aa8a3e6ef18cb66c
Autor:
Benjamin Klein
Dropouts, renegades, utopians. Children of the urban middle class and old beatniks living alone, as couples, in families, or as groups in the small Nuevomexicano towns. When photographer Irwin Klein began visiting northern New Mexico in the mid-1960s
Autor:
Benjamin Klein, Manfred Kunz
Publikováno v:
Frontiers in Medicine, Vol 9 (2022)
Cutaneous lupus erythematosus (CLE) represents a complex autoimmune disease with a broad phenotypic spectrum ranging from acute to chronic destructive cutaneous lesions. Patients with CLE exhibit high photosensitivity and ultraviolet (UV) irradiation
Externí odkaz:
https://doaj.org/article/9976c3f649ff4b4981470a7d480e45dd
Autor:
Shuping Zhang, Hong Yang, Lianshan Wang, Hongjuan Cheng, Haixia Lu, Yanlian Yang, Lingyu Wan, Gu Xu, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson, Wenhong Sun
Publikováno v:
Materials, Vol 16, Iss 5, p 1925 (2023)
Bulk aluminum nitride (AlN) crystals with different polarities were grown by physical vapor transport (PVT). The structural, surface, and optical properties of m-plane and c-plane AlN crystals were comparatively studied by using high-resolution X-ray
Externí odkaz:
https://doaj.org/article/408aad5be8e044d9bb08a4980547cf93
Autor:
Zhe Chuan Feng, Dishu Zhao, Lingyu Wan, Weijie Lu, Jeffrey Yiin, Benjamin Klein, Ian T. Ferguson
Publikováno v:
Materials, Vol 15, Iss 24, p 8751 (2022)
Raman scattering spectroscopy (RSS) has the merits of non-destructiveness, fast analysis, and identification of SiC polytype materials. By way of angle-dependent Raman scattering (ADRS), the isotropic characteristics are confirmed for c-face 4H-SiC,
Externí odkaz:
https://doaj.org/article/ce0be4cacd4044089eb4044dd3ca5342
Autor:
Zhe Chuan Feng, Yu-Lun Liu, Jeffrey Yiin, Li-Chyong Chen, Kuei-Hsien Chen, Benjamin Klein, Ian T. Ferguson
Publikováno v:
Materials, Vol 16, Iss 1, p 97 (2022)
GaN nanowires (NWs) grown on silicon via atmospheric pressure chemical vapor deposition were doped with Cobalt (Co) by ion implantation, with a high dose concentration of 4 × 1016 cm−2, corresponding to an average atomic percentage of ~3.85%, and
Externí odkaz:
https://doaj.org/article/7a34ae3bda704338affa1837873adff4