Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Benjamen N. Taber"'
Publikováno v:
The Journal of Physical Chemistry C. 127:4651-4659
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d0dc2aaeb616322d694ef20ce5a3d4
https://doi.org/10.1021/acs.jpcc.3c00052
https://doi.org/10.1021/acs.jpcc.3c00052
Autor:
Alejandro L. Briseno, George V. Nazin, James S. Prell, Lei Zhang, Benjamen N. Taber, Christian F. Gervasi, Dmitry A. Kislitsyn, Stefan C. B. Mannsfeld
Publikováno v:
Physical Chemistry Chemical Physics. 18:4842-4849
Charge transport in polymer- and oligomer-based semiconductor materials depends strongly on the structural ordering of the constituent molecules. Variations in molecular conformations influence the electronic structures of polymers and oligomers, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b479ade825646a4eef3a9295859f6319
https://doi.org/10.1039/c5cp07092a
https://doi.org/10.1039/c5cp07092a
Autor:
George V. Nazin, Sheng-Kuei Chiu, Andrea M. Goforth, Jon M. Mills, James Barnes, Benjamen N. Taber, Dmitry A. Kislitsyn, Christian F. Gervasi
Publikováno v:
The journal of physical chemistry letters. 9(4)
Recent studies have shown the presence of an amorphous surface layer in nominally crystalline silicon nanocrystals (SiNCs) produced by some of the most common synthetic techniques. The amorphous surface layer can serve as a source of deep charge trap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7712c73888da9f34debfa0df6af76d42
https://pubmed.ncbi.nlm.nih.gov/29365270
https://pubmed.ncbi.nlm.nih.gov/29365270
Autor:
Alejandro L. Briseno, George V. Nazin, Christian F. Gervasi, Stefan C. B. Mannsfeld, Dmitry A. Kislitsyn, Lei Zhang, Benjamen N. Taber
Publikováno v:
The Journal of Physical Chemistry C. 119:26959-26967
Charge transport in electronic applications involving molecular semiconductor materials strongly depends on the electronic properties of molecular-scale layers interfacing with external electrodes. In particular, local variations in molecular environ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75f9028db886c20c3b25758057842f9c
https://doi.org/10.1021/acs.jpcc.5b07577
https://doi.org/10.1021/acs.jpcc.5b07577
Autor:
Dmitry A. Kislitsyn, George V. Nazin, Christian F. Gervasi, Alejandro L. Briseno, Stefan C. B. Mannsfeld, Lei Zhang, Benjamen N. Taber
Publikováno v:
ACS Applied Materials & Interfaces. 7:15138-15142
Alkyl-substituted quaterthiophenes on Au(111) form dimers linked by their alkyl substituents and, instead of adopting the trans conformation found in bulk oligothiophene crystals, assume cis conformations. Surprisingly, the impact of the conformation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed7d31b2a59ec833aa197c1978d21700
https://doi.org/10.1021/acsami.5b03516
https://doi.org/10.1021/acsami.5b03516
Autor:
Athavan Nadarajah, Christopher C. Knutson, Milton N. Jackson, Jarred Z. Olson, Sage R. Bauers, Brandon M. Crockett, Kaylena R. Brevick, Daniel. J. Pacheco, Kevin M. Norelli, Anna F. Oliveri, Matthew E. Carnes, Hidekel A. Moreno-Luna, Darren W. Johnson, Benjamen N. Taber, Shannon W. Boettcher, Claire E. Sheehan
Publikováno v:
J. Mater. Chem. C. 2:8492-8496
Flat-[Ga13(μ3-OH)6(μ-OH)18(H2O)24](NO3)15 (Ga13) and heterometallic [Ga13−xInx(μ3-OH)6(μ-OH)18(H2O)24](NO3)15 (x = 5, 4) clusters were synthesized by the electrolysis of metal nitrate salt solutions to directly form, without purification, aqueo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7d3fb2953557ce55c5523b726214ecd
https://doi.org/10.1039/c4tc01354a
https://doi.org/10.1039/c4tc01354a
Autor:
William G. Crowley, Evan R. Darzi, Dmitry A. Kislitsyn, Christian F. Gervasi, Ramesh Jasti, Jon M. Mills, Benjamen N. Taber, George V. Nazin
Publikováno v:
The journal of physical chemistry letters. 7(16)
Quantum confinement of two-dimensional surface electronic states has been explored as a way for controllably modifying the electronic structures of a variety of coinage metal surfaces. In this Letter, we use scanning tunneling microscopy and spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa04a51128cd17c833d8188a508147e5
https://pubmed.ncbi.nlm.nih.gov/27459268
https://pubmed.ncbi.nlm.nih.gov/27459268
Autor:
George V. Nazin, Vancho Kocevski, Sheng-Kuei Chiu, Jon M. Mills, Andrea M. Goforth, Christian F. Gervasi, Ariel E. Rosenfield, Jan Rusz, Benjamen N. Taber, Olle Eriksson, Dmitry A. Kislitsyn
Publikováno v:
The journal of physical chemistry letters. 7(6)
The photophysical properties of silicon semiconductor nanocrystals (SiNCs) are extremely sensitive to the presence of surface chemical defects, many of which are easily produced by oxidation under ambient conditions. The diversity of chemical structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9eebafbaf8061dfc30ed13ccb665edd4
https://pubmed.ncbi.nlm.nih.gov/26938674
https://pubmed.ncbi.nlm.nih.gov/26938674
Autor:
Raghavasimhan Sreenivasan, H. He, James Chingwei Li, T. Levin, Shogo Mochizuki, Ali Khakifirooz, Bruce B. Doris, Darsen D. Lu, Dechao Guo, Pouya Hashemi, Huiming Bu, Benjamen N. Taber, Gen Tsutsui, Frederic Allibert, Bich-Yen Nguyen, S. M. Mignot, Theodorus E. Standaert, Tenko Yamashita, Winston Chern, Alexander Reznicek, C-Y Chen, T-S King Liu, K. Rim, Kangguo Cheng, E. C. Wall, Yunpeng Yin, Nuo Xu, Nicolas Loubet, Veeraraghavan S. Basker, Pierre Morin
Publikováno v:
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Strain engineering has been in the heart of CMOS technology for over a decade. However, the effectiveness of conventional strain elements, such as stress liners, embedded S/D stressors, and stress memorization, is significantly reduced when device ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbe14368339c453eae682dd98c01b3f2
https://doi.org/10.1109/s3s.2013.6716520
https://doi.org/10.1109/s3s.2013.6716520
Autor:
Dmitry A. Kislitsyn, Ariel E. Rosenfield, Olle Eriksson, George V. Nazin, Benjamen N. Taber, Jan Rusz, William J. I. DeBenedetti, Vancho Kocevski, Sheng-Kuei Chiu, Andrea M. Goforth, Christian F. Gervasi, Jon M. Mills
Publikováno v:
The Journal of Chemical Physics. 144:241102
We present results of a scanning tunneling spectroscopy (STS) study of the impact of dehydrogenation on the electronic structures of hydrogen-passivated silicon nanocrystals (SiNCs) supported on the Au(111) surface. Gradual dehydrogenation is achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::184c369d63488d2f220a2cdf2b88e336
https://doi.org/10.1063/1.4954833
https://doi.org/10.1063/1.4954833