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Spinterface Effects in Hybrid La0.7Sr0.3MnO3/SrTiO3/C-60/Co Magnetic Tunnel Junctions

Autor: Bergenti Ilaria, Kamiya Takeshi, Li Dongzhe, Riminucci Alberto, Graziosi Patrizio, MacLaren A. Donald, Rakshit K.Rajib, Singh Manju, Benini Mattia, Tada Hirokazu, Smogunov Alexander, Dediu A. Valentin

Publikováno v: ACS Applied Electronic Materials
ACS Applied Electronic Materials, 2022, ⟨10.1021/acsaelm.2c00300⟩

Orbital hybridization at the Co/C60interface been has proved to strongly enhance the magnetic anisotropy of the cobalt layer, promoting such hybrid systems as appealing components for sensing and memory devices. Correspondingly, the same hybridizatio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bd4c4d7eb5fcb47afbabfda6bdedca9d
https://zenodo.org/record/7387306

Spinterface Effects in Hybrid La0.7Sr0.3MnO3/SrTiO3/C60/Co Magnetic Tunnel Junctions.

Autor: Bergenti, Ilaria, Kamiya, Takeshi, Li, Dongzhe, Riminucci, Alberto, Graziosi, Patrizio, MacLaren, Donald A., Rakshit, Rajib K., Singh, Manju, Benini, Mattia, Tada, Hirokazu, Smogunov, Alexander, Dediu, Valentin A.

Publikováno v: ACS Applied Electronic Materials; 9/27/2022, Vol. 4 Issue 9, p4273-4279, 7p

Spinterface Formation at α-Sexithiophene/Ferromagnetic Conducting Oxide

Autor: Bergenti, Ilaria, Riminucci, Alberto, Graziosi, Patrizio, Albonetti, Cristiano, Benini, Mattia, Toffanin, Stefano, Lopez, Sergio G., Rakshit, Rajib K., Singh, Manju, Bentley, Phillip D., Melchakova, Iuliia A., Avramov, Pavel V., Dediu, Valentin A., Pratt, Andrew

Publikováno v: The Journal of Physical Chemistry - Part C; March 2021, Vol. 125 Issue: 11 p6073-6081, 9p

Spinterface Effects in Hybrid La 0.7 Sr 0.3 MnO 3 /SrTiO 3 /C 60 /Co Magnetic Tunnel Junctions.

Autor: Bergenti I; Institute of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy., Kamiya T; Department of Materials Engineering Science, Osaka University, 1-3, Machikaneyama, Toyonaka, Osaka, Japan 560-8531., Li D; CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, F-31055 Toulouse, France., Riminucci A; Institute of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy., Graziosi P; Institute of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy., MacLaren DA; SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, U.K., Rakshit RK; CSIR - National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India., Singh M; CSIR - National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India., Benini M; Institute of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy., Tada H; Department of Materials Engineering Science, Osaka University, 1-3, Machikaneyama, Toyonaka, Osaka, Japan 560-8531., Smogunov A; Service de Physique de l'Etat Condensé (SPEC), CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex France., Dediu VA; Institute of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy.

Publikováno v: ACS applied electronic materials [ACS Appl Electron Mater] 2022 Sep 27; Vol. 4 (9), pp. 4273-4279. Date of Electronic Publication: 2022 Aug 24.