Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bengul Metin"'
Publikováno v:
Physica B: Condensed Matter. 649:414504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de07546c58ca0382166f5581634302e1
https://doi.org/10.1016/j.physb.2022.414504
https://doi.org/10.1016/j.physb.2022.414504
Publikováno v:
Materials Research Bulletin. 70:804-808
Zero barrier height inhomogeneity in the device is generally assumed to conform to Gaussian distribution in the literature. In this study, zero barrier height inhomogeneity has been adopted to obey random distribution. Cell was divided into elementar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ad6a8152fdcb871b9acd8d9b23dad6d
https://doi.org/10.1016/j.materresbull.2015.06.007
https://doi.org/10.1016/j.materresbull.2015.06.007
Publikováno v:
Physica B: Condensed Matter. 412:64-69
Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current–volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15fcf45c313ff538fbec1b02eade40d3
https://doi.org/10.1016/j.physb.2012.11.030
https://doi.org/10.1016/j.physb.2012.11.030
Autor:
Nese Kavasoglu, Şadan Özden, Sener Oktik, Osman Pakma, Bengul Metin, Ozcan Birgi, A. Sertap Kavasoglu, Cem Tozlu
Publikováno v:
Synthetic Metals. 159:1880-1884
The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (δ), space charge region width (WD), interface state density (Nss), series resistance (Rs), accept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44a7a8cd2db1100d8e17ea2174bc100
https://doi.org/10.1016/j.synthmet.2009.06.015
https://doi.org/10.1016/j.synthmet.2009.06.015
WOS: 000376297500010 The larger the device area, the more difficult to carry on homogeneity during the fabrication and following treatments. Structural inhomogeneity may indicate themselves in variations in local electronic device parameters. Electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51ecce9cdce0f291e0cdcdcae630e21e
https://hdl.handle.net/20.500.12809/2510
https://hdl.handle.net/20.500.12809/2510
Autor:
Nese Kavasoglu, Sener Oktik, Şadan Özden, A. Sertap Kavasoglu, Ozcan Birgi, Cem Tozlu, Bengul Metin, Osman Pakma
WOS: 000267944000023 In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of Au/poly(4-vinyl phenol)/p-Si device have been performed. While the series resistance value display
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aeec268a8ebabea2dcb2ea18c26dd6a
https://hdl.handle.net/20.500.12809/4753
https://hdl.handle.net/20.500.12809/4753