Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Benedite Osternaud"'
Autor:
D. Bensahel, A. Tiberj, Vincent Paillard, N. Kernevez, M. N. Séméria, Bruno Ghyselen, Hubert Moriceau, Etienne Snoeck, André Rocher, C. Di Nardo, Alain Claverie, Pascal Besson, Thomas Ernst, J.M. Hartmann, Alexandra Abbadie, Cecile Aulnette, Anne Ponchet, Fuccio Cristiano, Frank Fournel, Olivier Rayssac, M. Cabié, Francois Andrieu, I. Cayrefourq, Laetitia Vincent, Philippe Boucaud, Carlos Mazure, Y. Bogumilowicz, Benedite Osternaud, Nicolas Daval
Publikováno v:
Solid-State Electronics. 48:1285-1296
Strained silicon on insulator wafers are today envisioned as a natural and powerful enhancement to standard SOI wafers and/or bulk-like strained Si layers. This paper is intended to demonstrate through miscellaneous structural results how a layer tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80645e4dd32d70e3eedeaa9e232397ed
https://doi.org/10.1016/j.sse.2004.01.011
https://doi.org/10.1016/j.sse.2004.01.011
Autor:
Fabrice Letertre, Benedite Osternaud, Nicolas Daval, Ian Cayrefourcq, C. Lagahe, B. Bataillou, C. Aulentte, C. Morales, N. Sousbie, S. Sartori, Carlos Mazure, Franck Fournel, Beatrice Biasse, E. Jalaguier, B. Aspar, J.F. Michaud, C. Richtarch, Bruno Ghyselen, A.M. Cartier, Takeshi Akatsu, S. Pocas, Olivier Rayssac, A. Beaumont, A. Soubie, Hubert Moriceau
Publikováno v:
Journal of Electronic Materials. 32:829-835
The SmartCut process was first developed to obtain silicon-on-insulator (SOI) materials. Now an industrial process, the main Unibond SOI-structure trends are reported in this paper. Many material combinations can be achieved by this process, because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4b45aa41353115a35fb42b8df91ba24
https://doi.org/10.1007/s11664-003-0196-x
https://doi.org/10.1007/s11664-003-0196-x
Autor:
Francois Andrieu, A. Tiberj, B. Ghyselen, P. Leduc, J.M. Hartmann, Nicolas Daval, Y. Campidelli, Yves Morand, B. Blondeau, C. Lagahe-Blanchard, D. Bensahel, Vincent Paillard, J.-F. Lugand, Thomas Ernst, S. Pocas, Hubert Moriceau, Laetitia Vincent, O. Rayssac, Carlos Mazure, Cecile Aulnette, Alexandra Abbadie, Benedite Osternaud, A.-M. Cartier, Olivier Kermarrec, F. Fournel, N. Kernevez, I. Cayrefourq, Y. Bogumilowicz, M. Rivoire, C. Di Nardo, M.N. Séméria, Philippe Boucaud, Pascal Besson, Alain Claverie
Publikováno v:
Scopus-Elsevier
Strained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed859ed97c4c5b94b8b997344e406b10
http://www.scopus.com/inward/record.url?eid=2-s2.0-19944432923&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-19944432923&partnerID=MN8TOARS
