Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Benchamekh, R."'
We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds*
Externí odkaz:
http://arxiv.org/abs/1610.05721
We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on key factors
Externí odkaz:
http://arxiv.org/abs/1606.03980
Publikováno v:
Phys. Rev. B 94, 115310 (2016)
We show that for lattice-mismatched zinc-blende-type (110)-grown quantum wells a significant contribution to the zero-magnetic-field spin splitting of electron subbands comes from strain-induced spin-orbit coupling. Combining envelope function theory
Externí odkaz:
http://arxiv.org/abs/1605.08942
We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and intersubband transiti
Externí odkaz:
http://arxiv.org/abs/1603.04407
Publikováno v:
J. Phys.: Condens. Matter 28, 305801 (2016)
We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the
Externí odkaz:
http://arxiv.org/abs/1603.03227
We examine the possibility of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs/AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended basis spds^* tight-binding model and recent progr
Externí odkaz:
http://arxiv.org/abs/1411.6565
Publikováno v:
Semicond. Sci. Technol. 30, 035019 (2015)
The properties of neutral acceptor states in zinc-blende semiconductors are re-examined in the frame of extended-basis $sp^3d^5s^*$ tight-binding model. The symmetry discrepancy between envelope function theory and atomistic calculations is explained
Externí odkaz:
http://arxiv.org/abs/1405.4129
Autor:
Benchamekh, R., Gippius, N. A., Even, J., Nestoklon, M. O., Jancu, J. -M., Ithurria, S., Dubertret, B., Efros, Al. L., Voisin, P.
CdSe nanoplatelets show perfectly quantized thicknesses of few monolayers. They present a situation of extreme, yet well defined quantum confinement. Due to large dielectric contrast between the semiconductor and its ligand environment, interaction b
Externí odkaz:
http://arxiv.org/abs/1311.5404
A procedure to obtain single-electron wavefunctions within the tight-binding formalism is proposed. It is based on linear combinations of Slater-type orbitals whose screening coefficients are extracted from the optical matrix elements of the tight-bi
Externí odkaz:
http://arxiv.org/abs/1303.7357
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