A new approach to modelling the impact of EMI on MOSFET DC behavior

Autor: Fernández García, Raúl, Gil Galí, Ignacio, Boyer, A., BenDhia, S., Vrignon, Bertrand

Publikováno v: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
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A simple analytical model to predict the DC MOSFET behavior under electromagnetic interference (EMI) is presented. The model is able to describe the MOSFET performance in the linear and saturation regions under EMI disturbance applied to the gate. Th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::25422302db25fb4aa146ceb4b08bf00c
https://hdl.handle.net/2117/14375

On-chip sampling in CMOS integrated circuits

Autor: Ben Dhia, Sonia, Delmas-Bendhia, S., Caignet, Fabrice, Sicard, E., Roca, M.

Publikováno v: IEEE Transactions on Electromagnetic Compatibility
IEEE Transactions on Electromagnetic Compatibility, Institute of Electrical and Electronics Engineers, 1999, 41 (4), pp.403-406. ⟨10.1109/15.809837⟩
IEEE Transactions on Electromagnetic Compatibility, 1999, 41 (4), pp.403-406. ⟨10.1109/15.809837⟩

International audience; This paper presents a technique for precise crosstalk delay measurement based on on-chip sampling. Results obtained on a test chip fabricated in 0.7-/spl mu/m CMOS technology exhibit a 100% delay increase in a long coupled lin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd1d36f3008e80f92d3be69aab504f6d
https://hal.archives-ouvertes.fr/hal-02523721

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Modelling of the susceptibility of 90 nm input output buffer.

Autor: Boyer, A., Fer, M., Courau, L., Sicard, E., BenDhia, S.

Publikováno v: 2008 Asia-Pacific Symposium on Electromagnetic Compatibility & 19th International Zurich Symposium on Electromagnetic Compatibility; 2008, p32-35, 4p