Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ben-Chang Chen"'
Publikováno v:
Japanese Journal of Applied Physics. 41:4055-4059
Demonstrates a new multilayer BARC structure for ArF lithography. The BARC is composed of a TEOS oxide / silicon nitride / silicon nitride film stack deposited by the conventional PECVD process. Silicon nitride films of different composition and opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85d7160f819d1868b8738e2004774555
https://doi.org/10.1143/jjap.41.4055
https://doi.org/10.1143/jjap.41.4055
Autor:
Chien-Kui Hsu, Tiao-Yuan Huang, Fu-Hsiang Ko, T.C. Chu, Hsuen-Li Chen, Ben-Chang Chen, L.S. Li
Publikováno v:
Japanese Journal of Applied Physics. 41:4163-4166
In the recent ITRS roadmap, electron beam based lithography would provide an approach to leading IC technologies from the generation of 180 nm. to sub-100 nm. As a consequence, high resolution and sensitivity resists for electron beam lithography are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1332cb4adab489c75e947543ae06201
https://doi.org/10.1143/jjap.41.4163
https://doi.org/10.1143/jjap.41.4163
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).
Electron beam (EB) lithography and direct patterning of low-dielectric-constant (low-k) materials are two crucial issues of nanofabrication technologies. In this paper, we propose direct patterning of negative tone hydrogen silsesquioxane (HSQ) film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7224150c6d939ff0073acae0f9c831f6
https://doi.org/10.1109/imnc.2001.984143
https://doi.org/10.1109/imnc.2001.984143
Publikováno v:
SPIE Proceedings.
In this paper, we demonstrated a novel anti-reflective coating structure for deep ultraviolet binary mask, which is based on three-layer Fabry-Perot Structure. The anti- reflective coating structure is composed of the chrome/oxide/chrome stack. By ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::652cdbba3c0c5bc1f44e7ff275af512c
https://doi.org/10.1117/12.438347
https://doi.org/10.1117/12.438347
Autor:
Tiao-Yuan Huang, Chien-Kui Hsu, Ben-Chang Chen, Jung-Yen Yang, T.C. Chu, Fu-Hsiang Ko, Hsuen-Li Chen
Publikováno v:
SPIE Proceedings.
Chemically amplified resists have been widely used in deep UV optical lithography. In this paper, we characterized positive deep UV resists for high-resolution electron beam lithography applications. Results indicate this deep UV resist is very high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e2062c7eebb46674ac1752acd96eec1
https://doi.org/10.1117/12.436705
https://doi.org/10.1117/12.436705
Autor:
Tseung-Yuen Tseng, Ming Shih Tsai, Po-Tsun Liu, Ya Liang Yang, Tsai Tsung-Ming, Simon M. Sze, Fon Shan Yeh, Ben Chang Chen, Ting-Chang Chang
Publikováno v:
Japanese Journal of Applied Physics. 40:3143
The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::977d761a9ba46f26c86de14c9739bf4a
https://doi.org/10.1143/jjap.40.3143
https://doi.org/10.1143/jjap.40.3143
Publikováno v:
Digest of Papers. Microprocesses & Nanotechnology 2001. 2001 International Microprocesses & Nanotechnology Conference (IEEE Cat. No.01EX468); 2001, p168-169, 2p