Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Ben Murdin"'
Publikováno v:
Applied Sciences, Vol 11, Iss 2, p 487 (2021)
Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature d
Externí odkaz:
https://doaj.org/article/e6f4b3be0acc4c28b97f5109177a8185
Autor:
Matias Urdampilleta, J. David Carey, Naitik A. Panjwani, Kevin P. Homewood, Mark A. Hughes, Ben Murdin
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2021, 118 (19), pp.194001. ⟨10.1063/5.0046904⟩
Applied Physics Letters, American Institute of Physics, 2021, 118 (19), pp.194001. ⟨10.1063/5.0046904⟩
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the electron spi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61231e65dc44ec6b63d1d344836a8dd7
https://aip.scitation.org/doi/10.1063/5.0046904
https://aip.scitation.org/doi/10.1063/5.0046904
Autor:
J. David Carey, Nafsika Theodoropoulou, Tobias Lindström, Matias Urdampilleta, Ben Murdin, Naitik A. Panjwani, Mark A. Hughes, I. S. Wisby, Kevin P. Homewood
Publikováno v:
Physical Review Applied
Physical Review Applied, American Physical Society, 2021, 16 (3), pp.034006. ⟨10.1103/PhysRevApplied.16.034006⟩
Physical Review Applied, American Physical Society, 2021, 16 (3), pp.034006. ⟨10.1103/PhysRevApplied.16.034006⟩
Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different \ud Er\ud centers are generated during th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6c3a0ea568e16f08ec6abe66934ab0c
https://hal.archives-ouvertes.fr/hal-03376608
https://hal.archives-ouvertes.fr/hal-03376608
Publikováno v:
Metrologia. 55:771-781
Frequency domain spectroscopy allows an experimenter to establish optical properties of solids in a wide frequency band including the technically challenging 10 THz region, and in other bands enables metrological comparison between competing techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8125856d87c25961a9344118de55c545
https://doi.org/10.1088/1681-7575/aae2c9
https://doi.org/10.1088/1681-7575/aae2c9
Publikováno v:
Applied Sciences, Vol 11, Iss 487, p 487 (2021)
Applied Sciences
Volume 11
Issue 2
Applied Sciences
Volume 11
Issue 2
Refractive indices of high resistivity Si and Ge were measured at temperatures between 4&ndash
296 K and at frequencies between 4.2&ndash
7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of
296 K and at frequencies between 4.2&ndash
7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::468736df3a7d873a91c3a9b72881f407
https://doi.org/10.3390/app11020487
https://doi.org/10.3390/app11020487
Publikováno v:
Light: Science & Applications, Vol 8, Iss 1, Pp 1-7 (2019)
Light, Science & Applications
Light: Science & Applications, 8 (1)
Light, Science & Applications
Light: Science & Applications, 8 (1)
Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::844c52a780aa8bb9f3944095df16592e
http://arxiv.org/abs/1808.04195
http://arxiv.org/abs/1808.04195
Excited states of a single donor in bulk silicon have previously been studied extensively based on effective mass theory. However, a proper theoretical description of the excited states of a donor cluster is still scarce. Here we study the excitation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::864706b4e2e62d88181258b8b106b40b
Autor:
Ben Murdin, M. A. Lourenço, Kevin P. Homewood, Steven Clowes, Nik Stavrias, Mark A. Hughes, Tom Peach, Kaymar Saeedi, Juerong Li, Steven Chick
Publikováno v:
Advanced Quantum Technologies. 1:1870021
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd484e610a405f24f22ad27ff5219beb
https://doi.org/10.1002/qute.201870021
https://doi.org/10.1002/qute.201870021
Autor:
Alexander Kölker, K. Saeedi, Neil J. Curson, E. Crane, M. A. W. van Loon, Ben Murdin, Taylor J. Z. Stock, N. Stavrias
Publikováno v:
Journal of Physics: Conference Series. 1079:012010
Recently, phosphorous structures in silicon have been of interest theoretically and experimentally due to their relevance in the field of quantum computing. Coherent control of the orbital states of shallow donors in silicon has been demonstrated in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b1aadd3651100cf4f7244ccd7840e2
https://doi.org/10.1088/1742-6596/1079/1/012010
https://doi.org/10.1088/1742-6596/1079/1/012010
Autor:
T. M. Burke, Alfred R. Adams, Graham John Pryce, C. R. Pidgeon, Ben Murdin, Timothy Ashley, Aleksey D. Andreev, Eoin P. O'Reilly
Publikováno v:
Solid-State Electronics. 47:387-394
Indium antimonide (InSb) has the smallest energy gap of any of the binary III–V materials, leading to a cut-off wavelength of 7 μm at 300 K. The addition of small proportions of nitrogen to InSb offers the prospect of extending the response wavele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76ba460afdb95199f2e588c03b54f551
https://doi.org/10.1016/s0038-1101(02)00377-5
https://doi.org/10.1016/s0038-1101(02)00377-5