Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ben Heying"'
Autor:
Nicholas C. Miller, Andrea Arias-Purdue, Erdem Arkun, David Brown, James F. Buckwalter, Robert L. Coffie, Andrea Corrion, Daniel J. Denninghoff, Michael Elliott, Dave Fanning, Ryan Gilbert, Daniel S. Green, Florian Herrault, Ben Heying, Casey M. King, Eythan Lam, Jeong-Sun Moon, Petra V. Rowell, Georges Siddiqi, Ioulia Smorchkova, Joe Tai, Jansen Uyeda, Mike Wojtowicz
Publikováno v:
IEEE Journal of Microwaves, Vol 3, Iss 4, Pp 1134-1146 (2023)
This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the
Externí odkaz:
https://doaj.org/article/5804e21f09df408e99c176f577a6bee9
Autor:
Robert Coffie, M. Truong, Mike Wojtowicz, Ioulia Smorchkova, Flavia S. Fong, R. Tsai, Thomas Wong, A. Oki, Xing Lan, Ben Heying, Mark Kintis, C. Namba
Publikováno v:
IEEE Microwave and Wireless Components Letters. 16:425-427
A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089909c63990e1721d2564d7f07a6ca8
https://doi.org/10.1109/lmwc.2006.877128
https://doi.org/10.1109/lmwc.2006.877128
Autor:
Tatyana I. Feygelson, Benjamin Poust, Karl D. Hobart, Mike Wojtowicz, Ioulia Smorchkova, Raffi Elmadjian, Elah Bozorg-Grayeli, Kenneth E. Goodson, Vincent Gambin, Gregg Lewis, Aaron K. Oki, R. Sandhu, Craig Geiger, Danny Li, Ben Heying
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
GaN HEMT technology is transforming applications in communications, radar, and electronic warfare by offering more than 5x higher RF transmit power over the existing GaAs-based technologies. The high breakdown voltage and current handling capability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb6b4c5091605666e7ef8bfab56c39bb
https://doi.org/10.1109/csics.2012.6340119
https://doi.org/10.1109/csics.2012.6340119
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
This paper describes our team's efforts to develop a manufacturable 0.2 um T-gate process for GaN HEMTs that enables high performance and enhanced reliability at high frequencies. Our team has demonstrated highly repeatable and uniform HEMT performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1228d2191275719e98c315936460fd0c
https://doi.org/10.1109/mwsym.2010.5517568
https://doi.org/10.1109/mwsym.2010.5517568
Publikováno v:
ECS Meeting Abstracts. :2553-2553
Gallium nitride's (GaN) superior material properties offers revolutionary performance for millimeter wave power amplifiers in terms of output power, power added efficiency, linearity, frequency, bandwidth, gain flatness, and noise. NGAS has developed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d76980813567df77095fcc961923975c
https://doi.org/10.1149/ma2012-02/30/2553
https://doi.org/10.1149/ma2012-02/30/2553
Publikováno v:
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International; 2010, p1218-1221, 4p