Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Belsito, L."'
Autor:
Tavabi, A. H., Rosi, P., Roncaglia, A., Rotunno, E., Beleggia, M., Lu, P-H, Belsito, L., Pozzi, G., Frabboni, S., Tiemeijer, P., Borkowski, R. E. Dunin., Grillo, V.
We report the use of an electrostatic MEMS-based device to produce high quality electron vortex beams with more than 1000 quanta of orbital angular momentum (OAM). Diffraction and off-axis electron holography experiments are used to show that the dia
Externí odkaz:
http://arxiv.org/abs/2203.00477
Autor:
Tavabi, A. H., Rosi, P., Ravelli, R. B. G., Gijsbers, A., Rotunno, E., Guner, T., Zhang, Y., Rocaglia, A., Belsito, L., Pozzi, G., Tibeau, D., Gazzadi, G., Ghosh, M., Frabboni, S., Peters, P. J., Karimi, E., Tiemeijer, P., Dunin-Borkowski, R. E., Grillo, V.
In quantum mechanics, each conserved quantity (e.g., energy, position, linear momentum and angular momentum) is associated with a Hermitian operator. Its expected value can then be determined by performing a measurement on the wavefunction. In modern
Externí odkaz:
http://arxiv.org/abs/2110.03391
Akademický článek
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Publikováno v:
In Ultrasonics March 2017 75:164-173
Poster presented at the e-MRS Spring Meeting 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f399930cf8ca1f029371cb0d9eaef4eb
Autor:
Ferri, M., Mancarell, F., Belsito, L., Roncaglia, A., Yan, J., Seshia, A.A., Soga, K., Zalesky, J.
Publikováno v:
In Procedia Engineering 2010 5:1426-1429
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 3, p035101-1-035101-8, 8p, 1 Chart, 4 Graphs
Publikováno v:
645 (2010): 491–494.
info:cnr-pdr/source/autori:Moscatelli F, Poggi A,Solmi S, Nipoti R, Armigliato A, Belsito L/titolo:Nitridation of the SiO2%2FSiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs/doi:/rivista:/anno:2010/pagina_da:491/pagina_a:494/intervallo_pagine:491–494/volume:645
info:cnr-pdr/source/autori:Moscatelli F, Poggi A,Solmi S, Nipoti R, Armigliato A, Belsito L/titolo:Nitridation of the SiO2%2FSiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs/doi:/rivista:/anno:2010/pagina_da:491/pagina_a:494/intervallo_pagine:491–494/volume:645
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::0f68c8a813d34d8c8af65afa4be99cec
https://publications.cnr.it/doc/65799
https://publications.cnr.it/doc/65799
Akademický článek
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Publikováno v:
IEEE Sensors 2007, pp. 181–184, Atlanta, GA, 28-31 Oct. 2007
info:cnr-pdr/source/autori:Cozzani E; Summonte C; Belsito L; Cardinali GC; Roncaglia A/congresso_nome:IEEE Sensors 2007/congresso_luogo:Atlanta, GA/congresso_data:28-31 Oct. 2007/anno:2007/pagina_da:181/pagina_a:184/intervallo_pagine:181–184
info:cnr-pdr/source/autori:Cozzani E; Summonte C; Belsito L; Cardinali GC; Roncaglia A/congresso_nome:IEEE Sensors 2007/congresso_luogo:Atlanta, GA/congresso_data:28-31 Oct. 2007/anno:2007/pagina_da:181/pagina_a:184/intervallo_pagine:181–184
We present a design study aimed at fabricating micromachined thermal emitters for infrared gas sensing with high emission efficiency in the 9-12 ?m wavelength range. In order to achieve high optical radiance with relatively low power consumption and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::be21bea83b1fe0def9d2183441c85d38