Zobrazeno 1 - 10
of 540
pro vyhledávání: '"Bellet-Amalric E"'
Autor:
Chen, A. -H., Dempsey, C. P., Pendharkar, M., Sharma, A., Zhang, B., Tan, S., Bellon, L., Frolov, S. M., Palmstrom, C. J., Bellet-Amalric, E., Hocevar, M.
Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they
Externí odkaz:
http://arxiv.org/abs/2301.12424
Autor:
Bougerol, C., Robin, E., Di Russo, E., Bellet-Amalric, E., Grenier, V., Ajay, A., Rigutti, L., Monroy, E.
Publikováno v:
ACS Appl. Mater. Interfaces 2021, 13, 4165-4173
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from x=0 to 1, a
Externí odkaz:
http://arxiv.org/abs/2010.13577
Autor:
Harikumar, A., Donatini, F., Bougerol, C., Bellet-Amalric, E., Thai, Q. -M., Dujardin, C., Dimkou, I., Purcell, S. T., Monroy, E.
Publikováno v:
Nanotechnology 31(50), 505205 (2020)
In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet lamps. Highl
Externí odkaz:
http://arxiv.org/abs/2005.14486
Autor:
Tiwari, V., Makita, K., Arino, M., Morita, M., Crozes, T., Bellet-Amalric, E., Kuroda, S., Boukari, H., Besombes, L.
We demonstrate radio-frequency tuning of the energy of individual CdTe/ZnTe quantum dots (QDs) by Surface Acoustic Waves (SAWs). Despite the very weak piezoelectric coefficient of ZnTe, SAW in the GHz range can be launched on a ZnTe surface using int
Externí odkaz:
http://arxiv.org/abs/2005.13254
The propagation of sidewall steps during the growth of nanowires is calculated in the frame of the Burton-Cabrera-Frank model. The stable shape of the nanowire comprises a cylinder section on top of a cone section: their characteristics are obtained
Externí odkaz:
http://arxiv.org/abs/2002.12832
Autor:
Dimkou, I., Harikumar, A., Donatini, F., Lähnemann, J., Hertog, M. I. den, Bougerol, C., Bellet-Amalric, E., Mollard, N., Ajay, A., Ledoux, G., Purcell, S. T., Monroy, E.
Publikováno v:
Nanotechnology 31, 204001 (2020)
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources. The optical
Externí odkaz:
http://arxiv.org/abs/1911.13133
Publikováno v:
Semicond. Sci. Technol. 34 075021 (2019)
The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In this work we compare the room-temperature contactless ER and photolum
Externí odkaz:
http://arxiv.org/abs/1903.04481
Autor:
Ajay, A., Lim, C. B., Browne, D. A., Polaczynski, J., Bellet-Amalric, E., Bleuse, J., Hertog, M. I. den, Monroy, E.
Publikováno v:
A. Ajay et al., Nanotechnology 28, 405204 (2017)
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of d
Externí odkaz:
http://arxiv.org/abs/1705.04096
Autor:
Dau, M. T., Vergnaud, C., Marty, A., Rortais, F., Beigné, C., Boukari, H., Bellet-Amalric, E., Guigoz, V., Renault, O., Alvarez, C., Okuno, H., Pochet, P., Jamet, M.
Publikováno v:
Appl. Phys. Lett. 110, 011909 (2017)
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substr
Externí odkaz:
http://arxiv.org/abs/1702.05121
Autor:
Rueda-Fonseca, P., Orrù, M., Bellet-Amalric, E., Robin, E., Hertog, M. Den, Genuist, Y., André, R., Tatarenko, S., Cibert, J.
Publikováno v:
J. Appl. Phys. 119, 164303 (2016)
With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nan
Externí odkaz:
http://arxiv.org/abs/1603.09566