Zobrazeno 1 - 10
of 558
pro vyhledávání: '"Belianinov, A."'
Autor:
Somnath, Suhas, Smith, Chris R., Laanait, Nouamane, Vasudevan, Rama K., Ievlev, Anton, Belianinov, Alex, Lupini, Andrew R., Shankar, Mallikarjun, Kalinin, Sergei V., Jesse, Stephen
Materials science is undergoing profound changes due to advances in characterization instrumentation that have resulted in an explosion of data in terms of volume, velocity, variety and complexity. Harnessing these data for scientific research requir
Externí odkaz:
http://arxiv.org/abs/1903.09515
Akademický článek
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Autor:
Zhao, Yunshan, Liu, Dan, Chen, Jie, Zhu, Liyan, Belianinov, Alex, Ovchinnikova, Olga S., Unocic, Raymond R., Burch, Matthew J., Kim, Songkil, Hao, Hanfang, Pickard, Daniel S, Li, Baowen, Thong, John T L
Publikováno v:
Nature Communications 8, Article number: 15919 (2017)
The ability to engineer the thermal conductivity of materials allows us to control the flow of heat and derive novel functionalities such as thermal rectification, thermal switching, and thermal cloaking. While this could be achieved by making use of
Externí odkaz:
http://arxiv.org/abs/1705.06845
Autor:
Stanford, Michael G., Pudasaini, Pushpa R., Gallmeier, Elisabeth T., Cross, Nicholas, Liang, Liangbo, Oyedele, Akinola, Duscher, Gerd, Mahjouri-Samani, Masoud, Wang, Kai, Xiao, Kai, Geohegan, David B., Belianinov, Alex, Sumpter, Bobby G., Rack, Philip D.
Publikováno v:
Adv. Funct. Mater. 2017, 27, 1702829
Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single materia
Externí odkaz:
http://arxiv.org/abs/1705.05503
Autor:
Choi, Min Gi, Belianinov, Alex, Pawlicki, Alison, Park, Seonha, Lee, Habeom, Ovchinnikova, Olga S., Kim, Songkil
Publikováno v:
In Surfaces and Interfaces October 2021 26
Publikováno v:
Annals of Applied Statistics 2018, Vol. 12, No. 1, 348-377
This paper presents a regularized regression model with a two-level structural sparsity penalty applied to locate individual atoms in a noisy scanning transmission electron microscopy image (STEM). In crystals, the locations of atoms is symmetric, co
Externí odkaz:
http://arxiv.org/abs/1611.08280
Publikováno v:
In Carbon Trends July 2021 4
Autor:
Michael Titze, Jonathan D. Poplawsky, Silvan Kretschmer, Arkady V. Krasheninnikov, Barney L. Doyle, Edward S. Bielejec, Gerhard Hobler, Alex Belianinov
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1884 (2023)
Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms o
Externí odkaz:
https://doaj.org/article/c54945960af64d4bb1c5fab7fe84dba6
Autor:
Seol, Daehee, Kim, Songkil, Jang, Woo-Sung, Jin, Yeongrok, Kang, Seunghun, Kim, Sera, Won, Dongyeun, Lee, Chanwoo, Kim, Young-Min, Lee, Jaekwang, Yang, Heejun, Jeong, Mun Seok, Belianinov, Alex, Tselev, Alexander, Somnath, Suhas, Smith, Christopher R., Ovchinnikova, Olga S., Balke, Nina, Kim, Yunseok
Publikováno v:
In Nano Energy January 2021 79
Publikováno v:
Carbon Trends, Vol 4, Iss , Pp 100055- (2021)
In this work we present images of carbon fiber fractured surfaces observed for the first time by Helium Ion Microscopy (HIM) at high magnifications, aiming to capture defects ranging in size between 10 nm and 100 nm. Nominal critical defect sizes of
Externí odkaz:
https://doaj.org/article/ea9aff1ea1bd45dea6783144ccca86fb