Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Bekir Gürbulak"'
Autor:
Danil W. Boukhvalov, Bekir Gürbulak, Songül Duman, Lin Wang, Antonio Politano, Lorenzo S. Caputi, Gennaro Chiarello, Anna Cupolillo
Publikováno v:
Nanomaterials, Vol 7, Iss 11, p 372 (2017)
Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in
Externí odkaz:
https://doaj.org/article/d118ad9e3c55445b8867d08056afc11b
Publikováno v:
Iranian Journal of Science and Technology, Transactions A: Science. 46:1697-1703
Analysis of magnesium ferrite and nickel doped magnesium ferrite thin films grown by Spray Pyrolysis
Publikováno v:
Materials Today: Proceedings. 46:6920-6923
The magnetic magnesium ferrite (MgFe2O4) with a partially inverse spinel structure has been prepared by the classic ceramic method, which have practical application in information storage systems, magnetocaloric refrigeration and magnetic diagnostics
Publikováno v:
Journal of Electronic Materials. 49:5698-5704
In this study, Al/p-GaSe/In Schottky diodes (SDs) were fabricated by using a p-type GaSe semiconductor grown by the Brigdman-Stockbarger method. Current–voltage (I–V) measurements of the Al/p-GaSe/In diode were carried out from 100 K to 400 K wit
Autor:
Federica Bondino, Songül Duman, Silvia Nappini, Gianluca D'Olimpio, Corneliu Ghica, Tevfik Onur Menteş, Federico Mazzola, Marian Cosmin Istrate, Matteo Jugovac, Mykhailo Vorokhta, Sergio Santoro, Bekir Gürbulak, Andrea Locatelli, Danil W. Boukhvalov, Antonio Politano
Publikováno v:
Advanced Functional Materials. 32:2205923
Publikováno v:
Optical Materials. 125:112138
In present study, Sn/p-GaTe/In Schottky diode is fabricated using thermal evaporation method. The current-voltage (I-V) measurements of Sn/p-GaTe/In diode are carried out in the temperature range of 40-300 K with the steps of 10 K under dark conditio
Autor:
Songül Duman, Bekir Gürbulak, Valentina Paolucci, Silvia Nappini, Antonio Politano, Federica Bondino, Luca Ottaviano, Danil W. Boukhvalov, Andrea Locatelli, Tevfik Onur Menteş, Luca Lozzi, Mykhailo Vorokhta, Gianluca D'Olimpio, Francesca Genuzio
Publikováno v:
Advanced functional materials (Internet) (2020). doi:10.1002/adfm.202005466
info:cnr-pdr/source/autori:D'Olimpio G.; Nappini S.; Vorokhta M.; Lozzi L.; Genuzio F.; Mentes T.O.; Paolucci V.; Gurbulak B.; Duman S.; Ottaviano L.; Locatelli A.; Bondino F.; Boukhvalov D.W.; Politano A./titolo:Enhanced Electrocatalytic Activity in GaSe and InSe Nanosheets: The Role of Surface Oxides/doi:10.1002%2Fadfm.202005466/rivista:Advanced functional materials (Internet)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume
info:cnr-pdr/source/autori:D'Olimpio G.; Nappini S.; Vorokhta M.; Lozzi L.; Genuzio F.; Mentes T.O.; Paolucci V.; Gurbulak B.; Duman S.; Ottaviano L.; Locatelli A.; Bondino F.; Boukhvalov D.W.; Politano A./titolo:Enhanced Electrocatalytic Activity in GaSe and InSe Nanosheets: The Role of Surface Oxides/doi:10.1002%2Fadfm.202005466/rivista:Advanced functional materials (Internet)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume
Gallium selenide (GaSe) is a van der Waals semiconductor widely used for optoelectronic devices, whose performances are dictated by bulk properties, including band-gap energy. However, recent experimental observations that the exfoliation of GaSe int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2f52a08d80b6fc293a93c65dfd96fc6
http://hdl.handle.net/11697/152426
http://hdl.handle.net/11697/152426
Publikováno v:
Optik. 165:310-318
This is the first study on Si-contributed CdO films fabricated via sol-gel process. Si-doping impact on the crystalline, topographic and optical qualities of cadmium oxide has been searched with XRD, SEM, AFM and UV/vis spectrophotometer. The whole f
Autor:
Reinier Oropesa-Nuñez, D. W. Boukhvalov, Jaya Kumar Panda, Francesco Bonaccorso, Bekir Gürbulak, Vittorio Pellegrini, Sebastiano Bellani, Songül Duman, Emanuele Lago, Silvia Gentiluomo, Antonio Esau Del Rio Castillo, Mirko Prato, Antonio Politano, Peter S. Toth, Elisa Petroni
Publikováno v:
Small
Single- and few-layered InSe flakes are produced by the liquid-phase exfoliation of beta-InSe single crystals in 2-propanol, obtaining stable dispersions with a concentration as high as 0.11 g/L. Ultracentrifugation is used to tune the morphology, i.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3294efb5143a63c4cbc428997f9b664
http://arxiv.org/abs/1903.08967
http://arxiv.org/abs/1903.08967
Publikováno v:
Radiation Physics and Chemistry. 179:109208
In this work, the change according to the different voltages (0, 5, 10, 15, 20 and, 25 V) of γ − ray linear attenuation coefficients for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors have been m