Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Beining Zheng"'
Autor:
Shouhua Feng, Yaowen Zhang, Hongwei Hou, Chunxia Wen, Xuanchen Dong, Wenshu Shi, Ruike Lv, Meichun Fu, Junwei Liu, Jiajun Lu, Longhui Duan, Mei Han, Beining Zheng, Lu Gao
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract Understanding the microstructure of materials and their impact on performance is crucial for new electronic devices design. The strong interaction between multiple degrees of freedom (spin, orbit, charge, and lattice) within perovskite type
Externí odkaz:
https://doaj.org/article/e6af89917c464ffc9f8b209317db4bbd
Publikováno v:
Nanoscale Advances. 5:2418-2421
The terminal layer atoms of InTe was regulated via molecular-beam-epitaxial growth to achieve enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5eb8784b1ed96749448c34c7ea1b285
https://doi.org/10.1039/d3na00142c
https://doi.org/10.1039/d3na00142c
Autor:
Jingyu Shi, Ge Sun, Liping Li, Yuanhua Xia, Fei Du, Xiaojuan Liu, Hongwei Hou, Xiangyan Hou, Beining Zheng, Xiaofeng Wu, Keke Huang, Shouhua Feng
Publikováno v:
ACS Energy Letters. 8:48-55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ec3fc2ec0f40ca2a073bb8f7d69c5c4
https://doi.org/10.1021/acsenergylett.2c02329
https://doi.org/10.1021/acsenergylett.2c02329
Autor:
Zhongyuan Liu, Xiaofeng Wu, Beining Zheng, Yu Sun, Changmin Hou, Jie Wu, Keke Huang, Shouhua Feng
Publikováno v:
Chemical Communications. 58:9890-9893
Cobalt-plasma sparked by a pulsed laser was utilized for the first time to modify a BiVO4 photoanode by surface structural reconstruction.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6ea8aa55ddd24958534f25da7c5ee3
https://doi.org/10.1039/d2cc03257k
https://doi.org/10.1039/d2cc03257k
Autor:
Zehan Wu, Shu Ping Lau, Yi Zhang, Xianhui Chen, Beining Zheng, Yongxin Lyu, Ran Ding, Zhibin Yang, Jianhua Hao
Publikováno v:
Nature Materials. 20:1203-1209
Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b43a7a5ba42885d0cbfb9c504c377e43
https://doi.org/10.1038/s41563-021-01001-7
https://doi.org/10.1038/s41563-021-01001-7
Autor:
Lu Yao, Xiaofeng Wu, Beining Zheng, Jinghai Liu, Zhibin Geng, Yuan Zhang, Minmin Cai, Zhiyu Shao, Mengpei Jiang, Yaowen Zhang, Yu Chen, Keke Huang, Shouhua Feng
Publikováno v:
Small Methods. :2201550
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482c38705eda86a4841ad95a637c3305
https://doi.org/10.1002/smtd.202201550
https://doi.org/10.1002/smtd.202201550
Autor:
Maohai Xie, Zehan Wu, Jianhua Hao, Ran Ding, Shu Ping Lau, Beining Zheng, Jianfeng Mao, Feng Guo
Publikováno v:
Advanced Optical Materials. 9:2101052
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe6527dedfd2d0fd16302675c68c7b5
https://doi.org/10.1002/adom.202101052
https://doi.org/10.1002/adom.202101052
Autor:
Xiaofeng Wu, Beining Zheng, Liqun Luo, Mei Han, Yu Sun, Keke Huang, Long Yuan, Meng Wang, Shouhua Feng
Publikováno v:
Chemical Communications. 53:2499-2502
LaFeO3 films, as photoelectrocatalysts, could be slightly reduced by annealing in an oxygen-deficient atmosphere. The introduced oxygen vacancies increase the electrical conductivity and change their surface band structures which endows LaFeO3 films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13c78f77f2392b365ea147af308ffac5
https://doi.org/10.1039/c7cc00140a
https://doi.org/10.1039/c7cc00140a
Autor:
Xiaofeng Wu, Hongping Guo, Jie Wu, Beining Zheng, Shouhua Feng, Long Yuan, Keke Huang, Yu Sun
Publikováno v:
Applied Surface Science. 360:547-552
The crystalline quality of epitaxial films depends on the degree of lattice match between substrates and films. Here, we report a growth strategy for large mismatched epi-films to grow GaSb films on Si(1 1 1) substrates. The epitaxial strategy can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf92de5ac2ed591a888c6cf356c0185
https://doi.org/10.1016/j.apsusc.2015.10.198
https://doi.org/10.1016/j.apsusc.2015.10.198
Autor:
Yu, Sun, Xiaofeng, Wu, Long, Yuan, Meng, Wang, Mei, Han, Liqun, Luo, Beining, Zheng, Keke, Huang, Shouhua, Feng
Publikováno v:
Chemical communications (Cambridge, England). 53(16)
LaFeO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::28d3eb24ffcd83ab14a47501d789fb62
https://pubmed.ncbi.nlm.nih.gov/28184385
https://pubmed.ncbi.nlm.nih.gov/28184385